TM X-Class HiPerFET V = 850V IXFT50N85XHV DSS Power MOSFET I = 50A IXFH50N85X D25 R 105m DS(on) IXFK50N85X TO-268HV (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S D (Tab) Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25 C to 150 C 850 V DSS J V T = 25 C to 150 C, R = 1M 850 V DGR J GS V Continuous 30 V GSS V Transient 40 V G GSM D S D (Tab) I T = 25 C50A D25 C I T = 25 C, Pulse Width Limited by T 125 A DM C JM TO-264 (IXFK) I T = 25 C25A A C E T = 25 C2J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 890 W D C G D T -55 ... +150 C D (Tab) J S T 150 C JM G = Gate D = Drain T -55 ... +150 C stg S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features M Mounting Torque (TO-247 & TO-264) 1.13 / 10 Nm/lb.in d Weight TO-268HV 4 g International Standard Packages TO-247 6 g High Voltage Package TO-264 10 g Low R and Q DS(ON) G Avalanche Rated Low Package Inductance Advantages Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV V = 0V, I = 1mA 850 V Easy to Mount DSS GS D Space Savings V V = V , I = 4mA 3.5 5.5 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 50 A DSS DS DSS GS Power Supplies T = 125C 3 mA J DC-DC Converters PFC Circuits R V = 10V, I = 0.5 I , Note 1 105 m DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2016 IXYS CORPORATION, All Rights Reserved DS100704D(12/16)IXFT50N85XHV IXFH50N85X IXFK50N85X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 19 32 S fs DS D D25 R Gate Input Resistance 0.6 Gi C 4480 pF iss C V = 0V, V = 25V, f = 1MHz 4863 pF oss GS DS C 116 pF rss Effective Output Capacitance C 180 pF o(er) Energy related V = 0V GS C 750 pF V = 0.8 V o(tr) Time related DS DSS t 27 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 69 ns d(off) R = 1 (External) G t 14 ns f Q 152 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 28 nC gs GS DS DSS D D25 Q 88 nC gd R 0.14 C/W thJC R TO-247 0.21 C/W thCS TO-264P 0.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 50 A S GS I Repetitive, pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 218 ns rr I = 25A, -di/dt = 100A/ s F Q 1.85 C RM V = 100V R I 17.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537