X-On Electronics has gained recognition as a prominent supplier of IXFH52N30P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFH52N30P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFH52N30P IXYS

IXFH52N30P electronic component of IXYS
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See Product Specifications
Part No.IXFH52N30P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 52 Amps 300V 0.066 Rds
Datasheet: IXFH52N30P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 9.072 ea
Line Total: USD 9.07 
Availability - 283
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
283
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 9.072
3 : USD 6.258
8 : USD 5.922
120 : USD 5.908
510 : USD 5.768

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFH52N30P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFH52N30P and other electronic components in the MOSFETs category and beyond.

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TM V = 300V IXFV52N30P Polar Power MOSFETs DSS I = 52A TM IXFV52N30PS HiPerFET D25 R 73m IXFH52N30P DS(on) t 200ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25C to 150C 300 V DSS J PLUS220SMD (IXFV S) V T = 25C to 150C, R = 1M 300 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 52 A D25 C G I T = 25C, Pulse Width Limited by T 150 A DM C JM S D (Tab) I T = 25C 52 A A C TO-247 (IXFH) E T = 25C 1 J AS C dv/dt I I , V V ,T 150C 10 V/ns S DM DD DSS J P T = 25C 400 W D C T -55 ... +150 C G J D T 150 C D (Tab) JM S T -55 ... +150 C stg G = Gate D = Drain T Maximum Lead Temperature for Soldering 300 C L S = Source Tab = Drain T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13/10 Nm/lb.in d Features F Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb C Fast Intrinsic Rectifier Weight PLUS220 & PLUS220SMD 4 g Avalanche Rated TO-247 6 g Low R and Q DS(ON) G Low Package Inductance Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 250A 300 V Space Savings DSS GS D V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A Switch-Mode and Resonant-Mode DSS DS DSS GS T = 125C 1 mA Power Supplies J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 73 m DS(on) GS D D25 Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 2013 IXYS CORPORATION, All Rights Reserved DS99197G(10/13) IXFH52N30P IXFV52N30P IXFV52N30PS Symbol Test Conditions Characteristic Values PLUS220 (IXFV) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 20 30 S fs DS D D25 C 3490 pF iss C V = 0V, V = 25V, f = 1MHz 550 pF oss GS DS C 130 pF rss t 24 ns d(on) Resistive Switching Times t 22 ns r V = 10V, V = 0.5 V , I = 52A GS DS DSS D t 60 ns d(off) R = 4 (External) 1 = Gate G t 20 ns f 2,4 = Drain 3 = Source Q 110 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 25 nC gs GS DS DSS D D25 Q 53 nC gd R 0.31 C/W thJC R (TO-247 & PLUS220) 0.25 C/W thCS Source-Drain Diode Characteristic Values T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 52 A S GS I Repetitive, pulse width limited by T 150 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS TO-247 (IXFH) Outline t 160 200 ns rr I = 25A, -di/dt = 100A/ s F Q 800 nC RM V = 100V, V = 0V R GS I 7 A RM P Note 1: Pulse test, t 300 s, duty cycle, d 2%. e 1 = Gate 2 = Drain PLUS220SMD (IXFV S) Outline 3 = Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 1 = Gate 2,4 = Drain e 5.20 5.72 0.205 0.225 3 = Source L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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