TM V = 300V IXFV52N30P Polar Power MOSFETs DSS I = 52A TM IXFV52N30PS HiPerFET D25 R 73m IXFH52N30P DS(on) t 200ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) G D S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25C to 150C 300 V DSS J PLUS220SMD (IXFV S) V T = 25C to 150C, R = 1M 300 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM I T = 25C 52 A D25 C G I T = 25C, Pulse Width Limited by T 150 A DM C JM S D (Tab) I T = 25C 52 A A C TO-247 (IXFH) E T = 25C 1 J AS C dv/dt I I , V V ,T 150C 10 V/ns S DM DD DSS J P T = 25C 400 W D C T -55 ... +150 C G J D T 150 C D (Tab) JM S T -55 ... +150 C stg G = Gate D = Drain T Maximum Lead Temperature for Soldering 300 C L S = Source Tab = Drain T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247) 1.13/10 Nm/lb.in d Features F Mounting Force (PLUS220) 11..65/2.5..14.6 N/lb C Fast Intrinsic Rectifier Weight PLUS220 & PLUS220SMD 4 g Avalanche Rated TO-247 6 g Low R and Q DS(ON) G Low Package Inductance Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 250A 300 V Space Savings DSS GS D V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A Switch-Mode and Resonant-Mode DSS DS DSS GS T = 125C 1 mA Power Supplies J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 73 m DS(on) GS D D25 Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 2013 IXYS CORPORATION, All Rights Reserved DS99197G(10/13) IXFH52N30P IXFV52N30P IXFV52N30PS Symbol Test Conditions Characteristic Values PLUS220 (IXFV) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 20 30 S fs DS D D25 C 3490 pF iss C V = 0V, V = 25V, f = 1MHz 550 pF oss GS DS C 130 pF rss t 24 ns d(on) Resistive Switching Times t 22 ns r V = 10V, V = 0.5 V , I = 52A GS DS DSS D t 60 ns d(off) R = 4 (External) 1 = Gate G t 20 ns f 2,4 = Drain 3 = Source Q 110 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 25 nC gs GS DS DSS D D25 Q 53 nC gd R 0.31 C/W thJC R (TO-247 & PLUS220) 0.25 C/W thCS Source-Drain Diode Characteristic Values T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 52 A S GS I Repetitive, pulse width limited by T 150 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS TO-247 (IXFH) Outline t 160 200 ns rr I = 25A, -di/dt = 100A/ s F Q 800 nC RM V = 100V, V = 0V R GS I 7 A RM P Note 1: Pulse test, t 300 s, duty cycle, d 2%. e 1 = Gate 2 = Drain PLUS220SMD (IXFV S) Outline 3 = Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 1 = Gate 2,4 = Drain e 5.20 5.72 0.205 0.225 3 = Source L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537