TM TM Polar2 HiperFET V = 500V IXFH52N50P2 DSS I = 52A Power MOSFET IXFT52N50P2 D25 R 120m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V TO-268 (IXFT) DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 30 V G GSS V Transient 40 V GSM S I T = 25C 52 A D25 C D (Tab) I T = 25C, Pulse Width Limited by T 150 A DM C JM I T = 25C52 A G = Gate D = Drain A C S = Source Tab = Drain E T = 25C 1.5 J AS C dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J P T = 25C 960 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C z stg International Standard Packages z Fast Intrinsic Diode T 1.6mm (0.062in.) from Case for 10s 300 C L z Avalanche Rated T Plastic Body for 10 seconds 260 C sold z Low R and Q DS(ON) G M Mounting Torque (TO-247) 1.13 / 10 Nm/lb.in. z Low Package Inductance d Weight TO-247 6 g TO-268 4 g Advantages z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 500 V DSS GS D z V V = V , I = 4mA 2.5 4.5 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS z DC-DC Converters z Laser Drivers I V = V , V = 0V 15 A DSS DS DSS GS z AC and DC Motor Drives T = 125C 1.5 mA J z Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 120 m DS(on) GS D D25 2011 IXYS CORPORATION, All Rights Reserved DS100256A(9/11)IXFH52N50P2 IXFT52N50P2 Symbol Test Conditions Characteristic Values TO-247 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 30 48 S fs DS D D25 C 6800 pF iss P C V = 0V, V = 25V, f = 1MHz 695 pF 1 2 3 oss GS DS C 76 pF rss t 22 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 46 ns d(off) e R = 1 (External) G t 8 ns f Terminals: 1 - Gate 2 - Drain 3 - Source Q 113 nC g(on) Dim. Millimeter Inches Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Min. Max. Min. Max. Q 43 nC A 4.7 5.3 .185 .209 gd A 2.2 2.54 .087 .102 1 R 0.13 C/W A 2.2 2.6 .059 .098 thJC 2 b 1.0 1.4 .040 .055 R 0.21 C/W thCS b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 Source-Drain Diode e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Symbol Test Conditions Characteristic Values L1 4.50 .177 (T = 25C Unless Otherwise Specified) Min. Typ. Max. P 3.55 3.65 .140 .144 J Q 5.89 6.40 0.232 0.252 I V = 0V 52 A R 4.32 5.49 .170 .216 S GS S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 208 A SM JM TO-268 Outline V I = I , V = 0V, Note 1 1.3 V SD F S GS t 250 ns rr I = 26A, -di/dt = 100A/s F I 14 A RM V = 85V, V = 0V R GS Q 1.27 C RM Terminals: 1 - Gate 2 - Drain 3 - Source 4 - Drain Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537