TM PolarHT Power V = 200V IXFV74N20P DSS TM I = 74A IXFV74N20PS MOSFET HiPerFET D25 R 34m IXFH74N20P DS(on) t 200ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings G D V T = 25C to 175C 200 V S DSS J D (TAB) V T = 25C to 175C, R = 1M 200 V DGR J GS V Continuous 20 V GSS PLUS220SMD (IXFV S) V Transient 30 V GSM I T = 25C 74 A D25 C I T = 25C, pulse width limited by T 200 A DM C JM G I T = 25C 37 A S A C D (TAB) E T = 25C 1 J AS C TO-247 (IXFH) dV/dt I I , V V ,T 175C 10 V/ns S DM DD DSS J P T = 25C 480 W D C T -55 ... +175 C J T 175 C JM D (TAB) T -55 ... +175 C stg T Maximum lead temperature for soldering 300 C L T Plastic body for 10s 260 C SOLD M Mounting torque (TO-247) 1.13/10 Nm/lb.in. d G = Gate D = Drain F Mounting force (PLUS220) 11..65/2.5..14.6 N/lb. C S = Source TAB = Drain Weight PLUS220 & PLUS220SMD 4 g TO-247 6 g Features z International standard packages z Fast recovery diode z Avalanche rated z Symbol Test Conditions Characteristic Values Low package inductance (T = 25C, unless otherwise specified) Min. Typ. Max. - easy to drive and to protect J BV V = 0V, I = 250A 200 V Advantages DSS GS D z V V = V , I = 4mA 2.5 5.0 V Easy to mount GS(th) DS GS D z Space savings I V = 20V, V = 0V 100 nA z GSS GS DS High power density I V = V 25 A DSS DS DSS V = 0V T = 150C 250 A GS J R V = 10V, I = 0.5 I , Note 1 34 m DS(on) GS D D25 2008 IXYS CORPORATION, All rights reserved DS99209F(05/08) IXFH74N20P IXFV74N20P IXFV74N20PS Symbol Test Conditions Characteristic Values PLUS220 (IXFV) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 30 44 S fs DS D D25 C 3300 pF iss C V = 0V, V = 25V, f = 1MHz 800 pF oss GS DS C 190 pF rss t 23 ns d(on) Resistive Switching Times t 21 ns r V = 1V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 60 ns d(off) R = 4 (External) G t 21 ns f Q 107 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 24 nC gs GS DS DSS D D25 Q 52 nC gd R 0.31 C/W thJC R (TO-247, PLUS220) 0.25 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 74 A S GS I Repetitive, pulse width limited by T 180 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS TO-247 (IXFH) Outline t 120 200 ns rr I = 25A, -di/dt = 100A/s F Q 0.40 C RM V = 100V, V = 0V R GS I 6 A RM P Note 1: Pulse test, t 300s duty cycle, d 2%. e PLUS220SMD (IXFV S) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537