TM X2-Class HiPerFET V = 650V IXFH80N65X2 DSS Power MOSFET I = 80A IXFK80N65X2 D25 R 38m DS(on) D TO-247 N-Channel Enhancement Mode (IXFH) G Avalanche Rated Fast Intrinsic Diode S G D S D (Tab) TO-264 Symbol Test Conditions Maximum Ratings (IXFK) V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM D D (Tab) I T = 25 C 80 A S D25 C I T = 25 C, Pulse Width Limited by T 160 A DM C JM G = Gate D = Drain S = Source Tab = Drain I T = 25 C 20 A A C E T = 25 C 3 J AS C dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 890 W D C Features T -55 ... +150 C J T 150 C JM International Standard Packages T -55 ... +150 C stg Low R and Q DS(ON) G Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13 / 10 Nm/lb.in d Weight TO-247 6 g Advantages TO-264 10 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 650 V DSS GS D Applications V V = V , I = 4mA 3.5 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS PFC Circuits T = 125 C 3 mA J AC and DC Motor Drives Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 38 m DS(on) GS D D25 DS100673E(2/20) 2020 IXYS CORPORATION, All Rights Reserved IXFH80N65X2 IXFK80N65X2 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 33 55 S fs DS D D25 R Gate Input Resistance 0.6 Gi C 8300 pF iss C V = 0V, V = 25V, f = 1MHz 5010 pF oss GS DS C 1.6 pF rss Effective Output Capacitance C 280 pF o(er) Energy related V = 0V GS C 1160 pF V = 0.8 V o(tr) Time related DS DSS t 32 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 70 ns d(off) R = 3 (External) G t 11 ns f Q 140 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 40 nC gd R 0.14 C/W thJC R TO-247 0.21 C/W thCS TO-264 0.15 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 80 A S GS I Repetitive, pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 200 ns rr I = 40A, -di/dt = 100A/s F Q 1.7 C RM V = 100V R I 16.7 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537