TM TM Polar HiPerFET V = 300V IXFT88N30P DSS I = 88A Power MOSFET IXFH88N30P D25 R 40m DS(on) IXFK88N30P t 200ns rr TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Tab Symbol Test Conditions Maximum Ratings TO-247(IXFH) V T = 25C to 150C 300 V DSS J V T = 25C to 150C, R = 1M 300 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D Tab S I T = 25C 88 A D25 C I External Lead Current Limit 75 A L(RMS) TO-264 (IXFK) I T = 25C, Pulse Width Limited by T 220 A DM C JM I T = 25C 60 A A C E T = 25C 2 J AS C G dV/dt I I , V V , T 150C 10 V/ns S DM DD DSS J D Tab S P T = 25C 600 W D C G = Gate D = Drain T -55 to +150 C J S = Source Tab = Drain T +150 C JM Features T -55 to +150 C stg T 1.6mm (0.063in) from Case for 10s 300 C L z International Standard Packages T Plastic Body for 10s 260 C z SOLD Fast Intrinsic Diode z M Mounting Torque (TO-247&TO-264) 1.13/10 Nm/lb.in. Avalanche Rated d z Low R and Q Weight TO-268 4 g DS(ON) G z Low Package Inductance TO-247 6 g TO-264 10 g Advantages z High Power Density z Easy to Mount Symbol Test Conditions Characteristic Values z Space Savings (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 300 V Applications DSS GS D V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D z DC-DC Coverters I V = 20V, V = 0V 100 nA z GSS GS DS Battery Chargers z I V = V , V = 0V 25 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 250 A J z DC Choppers R V = 10V, I = 0.5 I , Note 1 40 m z DS(on) GS D D25 AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS99216F(11/09)IXFT88N30P IXFH88N30P IXFK88N30P Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 40 60 S fs DS D D25 C 6300 pF iss C V = 0V, V = 25V, f = 1MHz 950 pF oss GS DS C 190 pF rss t 25 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 60A GS DS DSS D t 96 ns d(off) R = 3.3 (External) G t 25 ns f Millimeter Inches Dim. Q 180 nC g(on) Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q V = 10V, V = 0.5 V , I = 0.5 I 44 nC gs GS DS DSS D D25 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 90 nC gd b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 R 0.21 C/W thJC b2 2.90 3.09 .114 .122 R TO-247 0.21 C/W c 0.53 0.83 .021 .033 thCS D 25.91 26.16 1.020 1.030 TO-264 0.15 C/W E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 Source-Drain Diode L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. R 3.81 4.32 .150 .170 J R1 1.78 2.29 .070 .090 I V = 0V 88 A S 6.04 6.30 .238 .248 S GS T 1.57 1.83 .062 .072 I Repetitive, Pulse Width Limited by T 220 A SM JM TO-247 (IXFH) Outline V I = I , V = 0V, Note 1 1.5 V SD F S GS t 100 200 ns rr I = 25A, -di/dt = 100A/s, F V = 100V, V = 0V R GS Q 0 .6 C P RM 1 2 3 Note 1. Pulse test, t 300s, duty cycle, d 2%. e Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain TO-268 (IXFT) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537