TM TM Polar3 HiperFET V = 500V IXFJ26N50P3 DSS I = 14A Power MOSFET D25 R 295m DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode TM Avalanche Rated ISO TO-247 Fast Intrinsic Rectifier G Symbol Test Conditions Maximum Ratings D Isolated Tab S V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS G = Gate D = Drain S = Source V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C 14 A D25 C I T = 25 C, Pulse Width Limited by T 78 A DM C JM I T = 25 C13 A A C E T = 25 C 300 mJ AS C Features dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J Silicon Chip on Direct-Copper Bond P T = 25 C 180 W D C (DCB) Substrate Isolated Mounting Surface T -55 ... +150 C J 2500V~ Electrical Isolation T 150 C JM Fast Intrinsic Rectifier T -55 ... +150 C stg Avalanche Rated T Maximum Lead Temperature for Soldering 300 C Low R and Q L DS(ON) G T Plastic Body for 10s 260 C Low Package Inductance SOLD F Mounting Torque 1.13 / 10 Nm/lb.in C Advantages V 50/60 Hz, RM, t = 1min 2500 V~ ISOL Weight 5 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 500 V DSS GS D Switch-Mode and Resonant-Mode Power Supplies V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA GSS GS DS Laser Drivers AC and DC Motor Drives I V = V , V = 0V 25 A DSS DS DSS GS Robotics and Servo Controls T = 125C 750 A J R V = 10V, I = 13A, Note 1 295 m DS(on) GS D 2017 IXYS CORPORATION, All Rights Reserved DS100603C(12/17)IXFJ26N50P3 Symbol Test Conditions Characteristic Values ISO TO-247 (IXFJ) OUTLINE (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 14 23 S fs DS D D25 R Gate Input Resistance 2.1 Gi C 2220 pF iss C V = 0V, V = 25V, f = 1MHz 280 pF oss GS DS C 8 pF rss Effective Output Capacitance C 108 pF o(er) Energy related V = 0V GS C 185 pF V = 0.8 V PINS: o(tr) Time related DS DSS 1 = Gate t 21 ns 2 = Drain d(on) Resistive Switching Times 3 = Source t 7 ns r 4 = Isolated V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 38 ns d(off) R = 3 (External) G t 5 ns f Q 42 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 11 nC gs GS DS DSS D D25 Q 15 nC gd R 0.69 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 26 A S GS I Repetitive, pulse Width Limited by T 104 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 13A, -di/dt = 100A/ s F Q 0.9 nC RM V = 100V R I 10.2 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537