Preliminary Technical Information TM V = 300 V IXFK 102N30P PolarHT HiPerFET DSS I = 102 A D25 Power MOSFET R 33 m DS(on) N-Channel Enhancement Mode t 200 ns rr Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-264 (IXFK) V T = 25 C to 150 C 300 V DSS J V T = 25 C to 150 C R = 1 M 300 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM I T = 25 C 102 A D25 C G D I External lead current limit 75 A (TAB) D(RMS) S I T = 25C, pulse width limited by T 250 A DM C JM I T = 25C60A AR C G = Gate D = Drain E T = 25C60mJ S = Source AR C E T = 25 C 2.5 J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G P T = 25 C 700 W D C Features T -55 ... +150 C J T 150 C JM l International standard package T -55 ... +150 C stg l Unclamped Inductive Switching (UIS) T 1.6 mm (0.062 in.) from case for 10 s 300 C rated L l T Plastic body for 10 s 260 C Low package inductance SOLD - easy to drive and to protect M Mounting torque, Terminal lead torque 1.13/10 Nm/lb.in. d Advantages Weight TO-264 10 g l Easy to mount l Space savings l High power density Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 300 V DSS GS D V V = V , I = 4 mA 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 125 C 250 A GS J R V = 10 V, I = 0.5 I 33 m DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99221E(05/06) 2006 IXYS All rights reserved IXFK 102N30P TO-264 Outline Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 45 57 S fs DS D D25 C 7500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1150 pF oss GS DS C 230 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 28 ns r GS DS DSS D Dim. Millimeter Inches Min. Max. Min. Max. t R = 3.3 (External) 130 ns d(off) G A 4.82 5.13 .190 .202 t 30 ns A1 2.54 2.89 .100 .114 f A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 Q 224 nC g(on) b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 Q V = 10 V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 Q 110 nC gd E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC R 0.18 C/W J 0.00 0.25 .000 .010 thJC K 0.00 0.25 .000 .010 R 0.15 C/W thCS L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 Source-Drain Diode Characteristic Values R1 1.78 2.29 .070 .090 (T = 25 C, unless otherwise specified) S 6.04 6.30 .238 .248 J T 1.57 1.83 .062 .072 Symbol Test Conditions Min. Typ. Max. I V = 0 V 102 A S GS I Repetitive 250 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 200 ns rr F Q V = 100 V, V = 0 V 0.8 C RM R GS PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineer- ing lots but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimen- sions without notice. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2