TM V = 200 V IXFK 140N20P PolarHT HiPerFET DSS I = 140 A D25 Power MOSFET R 18 m DS(on) t 200 ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) V T = 25 C to 175 C 200 V DSS J V T = 25 C to 175 C R = 1 M 200 V DGR J GS V Continous 20 V GS V Transient 30 V GSM G I T = 25 C 140 A D D25 C (TAB) S I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 280 A DM C JM G = Gate D = Drain S = Source TAB = Drain I T = 25C60A AR C E T = 25 C 100 mJ AR C E T = 25C4J AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS Features T 150C, R = 4 J G P T = 25 C 830 W l D C International standard package l T -55 ... +175 C Unclamped Inductive Switching (UIS) J T 175 C rated JM l T -55 ... +150 C Low package inductance stg - easy to drive and to protect T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD Advantages M Mounting torque 1.13/10 Nm/lb.in. d l Easy to mount Weight 10 g l Space savings Symbol Test Conditions Characteristic Values l High power density (T = 25 C, unless otherwise specified) Min. Typ. Max. J BV V = 0 V, I = 250 A 200 V DSS GS D V V = V , I = 4 mA 2.5 5.0 V GS(th) DS GS D I V = 20 V , V = 0 200 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 150 C 250 A GS J R V = 10 V, I = 0.5 I 18 m DS(on) GS D D25 V = 15 V, I = 140A 14 m GS D Pulse test, t 300 s, duty cycle d 2 % DS99219E(01/06) 2006 IXYS All rights reserved IXFK 140N20P Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 50 84 S fs DS D D25 C 7500 pF iss C V = 0 V, V = 25 V, f = 1 MHz 1800 pF oss GS DS C 280 pF rss t 30 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 35 ns r GS DS DSS D t R = 3.3 (External) 150 ns d(off) G t 90 ns f Q 240 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 100 nC gd R 0.18 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 140 A S GS I Repetitive 280 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A 120 200 ns rr F -di/dt = 100 A/s Q V = 100 V, V = 0 V 3.5 C RM R GS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2