X-On Electronics has gained recognition as a prominent supplier of IXFK220N20X3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFK220N20X3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFK220N20X3 IXYS

IXFK220N20X3 electronic component of IXYS
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See Product Specifications
Part No.IXFK220N20X3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctn X3Class TO-264(3)
Datasheet: IXFK220N20X3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 20.258 ea
Line Total: USD 20.26 
Availability - 45
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
45
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 20.258
3 : USD 19.152
25 : USD 18.956

   
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We are delighted to provide the IXFK220N20X3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFK220N20X3 and other electronic components in the MOSFETs category and beyond.

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The IXFK220N20X3 with MOSFET DiscMSFT NChUltrJnctn X3Class TO-264(3) is a power MOSFET manufactured by IXYS. It is designed in a TO-264(3) package and it is comprised of a N-channel enhancement-mode MOSFET with fast intrinsic body diode characteristics. This device is suitable for reverse blocking, forward blocking, and other applications that require bidirectional blocking of high-frequency pulses. It has a total gate charge of 30 mC, a maximum Vds of 200 V, and a maximum Ids of 220 A. The features of this device make it suitable for a variety of high switching frequency, high current, and high voltage applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
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Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
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IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
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IXYS SEMICONDUCTOR
Littelfuse/IXYS
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