X-On Electronics has gained recognition as a prominent supplier of IXFK26N100P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFK26N100P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFK26N100P IXYS

IXFK26N100P electronic component of IXYS
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Part No.IXFK26N100P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 26 Amps 1000V
Datasheet: IXFK26N100P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 36.68 ea
Line Total: USD 36.68 
Availability - 1
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 36.68
2 : USD 34.678
25 : USD 34.314

   
Manufacturer
Product Category
RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the IXFK26N100P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFK26N100P and other electronic components in the MOSFETs category and beyond.

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The IXFK26N100P is an insulated-gate bipolar transistor (IGBT) module from IXYS Corporation. This module is part of the IXFY2N100P series, which is a family of high power IGBT modules with a wide voltage rating from 600V to 1,200V. This module provides high current handling with maximums of 100A and has a low saturation voltage. It is designed to be used in high power, high frequency inverter and converter applications, as well as traction applications. The package style of the module is a Press-Pack, which allows the user to optimize the heatsink area while reducing its size.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
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IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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