TM V = 800 V IXFK 27N80Q HiPerFET DSS IXFX 27N80Q I =27 A Power MOSFETs D25 R = 320 m DS(on) Q-CLASS t 250 ns Single MOSFET Die rr N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low t rr TM Symbol Test Conditions Maximum Ratings PLUS 247 (IXFX) V T = 25C to 150C 800 V DSS J V T = 25C to 150C R = 1 M 800 V DGR J GS (TAB) G V Continuous 20 V D GS V Transient 30 V GSM TO-264 AA (IXFK) I T = 25C27A D25 C I T = 25C, pulse width limited by T 108 A DM C JM I T = 25C27A AR C E T = 25C60mJ G AR C D (TAB) E T = 25C 2.5 J AS C S dv/dt I I , di/dt 100 A/ s, V V 5 V/ns S DM DD DSS G = Gate D = Drain T 150C, R = 2 J G S = Source TAB = Drain P T = 25C 500 W D C Features T -55 ... +150 C J z IXYS advanced low Q process T 150 C g JM z Low gate charge and capacitances T -55 ... +150 C stg - easier to drive T 1.6 mm (0.063 in.) from case for 10 s 300 C - faster switching L z International standard packages M Mounting torque TO-264 0.4/6 Nm/lb.in. d z Low R DS (on) z Weight PLUS 247 6 g Rated for unclamped Inductive load TO-264 10 g switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Applications Symbol Test Conditions Characteristic Values z DC-DC converters (T = 25C, unless otherwise specified) z J Battery chargers min. typ. max. z Switched-mode and resonant-mode power supplies V V = 0 V, I = 1mA 800 V DSS GS D z DC choppers z V V = V , I = 4mA 2.0 4.5 V AC motor control GS(th) DS GS D z Temperature and lighting controls I V = 20 V, V = 0 100 nA GSS GS DS Advantages I V = V 100 A DSS DS DSS z TM PLUS 247 package for clip or spring V = 0 V T = 125C 2 mA GS J mounting R V = 10 V, I = 0.5 I 320 m z DS(on) GS D D25 Space savings Note 1 z High power density DS98722A (12/02) 2002 IXYS All rights reservedIXFK 27N80Q IXFX 27N80Q Symbol Test Conditions Characteristic Values TM PLUS 247 Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I Note 1 20 27 S fs DS D D25 C 7600 pF iss C V = 0 V, V = 25 V, f = 1 MHz 750 pF oss GS DS C 120 pF rss t 20 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 28 ns r GS DS DSS D D25 t R = 1 (External), 50 ns d(off) G Terminals: 1 - Gate 2 - Drain (Collector) t 13 ns f 3 - Source (Emitter) 4 - Drain (Collector) Q 170 nC g(on) Dim. Millimeter Inches Min. Max. Min. Max. Q V = 10 V, V = 0.5 V , I = 0.5 I 47 nC gs GS DS DSS D D25 A 4.83 5.21 .190 .205 Q 65 nC A 2.29 2.54 .090 .100 gd 1 A 1.91 2.16 .075 .085 2 R 0.26 K/W b 1.14 1.40 .045 .055 thJC b 1.91 2.13 .075 .084 1 R 0.15 K/W b 2.92 3.12 .115 .123 thCK 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC Source-Drain Diode Characteristic Values L 19.81 20.32 .780 .800 (T = 25C, unless otherwise specified) J L1 3.81 4.32 .150 .170 Symbol Test Conditions min. typ. max. Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 I V = 0 V 27 A S GS TO-264 AA Outline I Repetitive 108 A SM pulse width limited by T JM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t 250 ns rr I = I ,-di/dt = 100 A/ s, V = 100 V Q 1.3 C F S R RM I 8A RM Millimeter Inches Dim. Note: 1. Pulse test, t 300 s, duty cycle d 2 % Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025