X-On Electronics has gained recognition as a prominent supplier of IXFK300N20X3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFK300N20X3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFK300N20X3 IXYS

IXFK300N20X3 electronic component of IXYS
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See Product Specifications
Part No.IXFK300N20X3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET N-Ch 200V Enh FET 200Vdgr 300A 4mOhm
Datasheet: IXFK300N20X3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 35.728 ea
Line Total: USD 35.73 
Availability - 10
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 35.728
2 : USD 33.782
3 : USD 33.768

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFK300N20X3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFK300N20X3 and other electronic components in the MOSFETs category and beyond.

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Preliminary Technical Information TM X3-Class HiPerFET V = 200V IXFK300N20X3 DSS Power MOSFET I = 300A IXFX300N20X3 D25 R 4m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 200 V G DSS J D V T = 25 C to 150 C, R = 1M 200 V Tab DGR J GS S V Continuous 20 V GSS PLUS247 (IXFX) V Transient 30 V GSM I T = 25 C (Chip Capability) 300 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25 C, Pulse Width Limited by T 700 A DM C JM G D I T = 25 C 150 A Tab A C S E T = 25 C 3.5 J AS C dv/dt I I , V V , T 150C 20 V/ns G = Gate D = Drain S DM DD DSS J S = Source Tab = Drain P T = 25 C 1250 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque (TO-264) 1.13/10 Nm/lb.in International Standard Packages d Low R and Q F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb DS(ON) G C Avalanche Rated Weight TO-264 10 g Low Package Inductance PLUS247 6 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 3mA 200 V DSS GS D Space Savings V V = V , I = 8mA 2.5 4.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 200 nA GSS GS DS I V = V , V = 0V 25 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 1.5 mA J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 4 m PFC Circuits DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2017 IXYS CORPORATION, All Rights Reserved DS100844B(9/17) IXFK300N20X3 IXFX300N20X3 Symbol Test Conditions Characteristic Values TO-264 Outline E A (T = 25C, Unless Otherwise Specified) Min. Typ. Max J Q S g V = 10V, I = 60A, Note 1 80 135 S fs DS D R Q1 D R Gate Input Resistance 1.8 Gi R1 1 2 3 L1 C 23.8 nF iss C V = 0V, V = 25V, f = 1MHz 4.0 nF oss GS DS L C 3.2 pF rss c b A1 b1 b2 Effective Output Capacitance e x2 C 1640 pF o(er) Energy related V = 0V GS 0P C 5640 pF 4 V = 0.8 V o(tr) Terminals: 1 = Gate Time related DS DSS 2,4 = Drain 3 = Source t 44 ns d(on) Resistive Switching Times t 43 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 184 ns d(off) R = 1 (External) G t 13 ns f Q 375 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 117 nC gs GS DS DSS D D25 Q 94 nC gd R 0.10 C/W thJC R 0.15 C/W thCS Source-Drain Diode TM PLUS 247 Outline A E1 E Q A2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max D2 J R D1 I V = 0V 300 A D S GS 4 1 2 3 I Repetitive, pulse Width Limited by T 1200 A SM JM L1 V I = 100A, V = 0V, Note 1 1.4 V SD F GS L t 172 ns rr I = 150A, -di/dt = 100A/ s F A1 b e Q 1.1 C 3 PLCS RM C b2 2 PLCS 2 PLCS V = 100V b4 R I 12.8 A RM Terminals: 1 - Gate 2,4 - Drain 3 - Source Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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IXYS RF
IXYS SEMICONDUCTOR
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