TM IXFK32N100P V = 1000V Polar Power MOSFET DSS TM IXFX32N100P I = 32A D25 HiPerFET R 320m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings TO-264 (IXFK) V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G D I T = 25C32A (TAB) S D25 C I T = 25C, pulse width limited by T 75 A DM C JM I T = 25C16A AR C PLUS247 (IXFX) E T = 25C 1.5 J AS C dV/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 960 W D C T -55 ... +150 C J T 150 C JM (TAB) T -55 ... +150 C stg G = Gate D = Drain T 1.6mm (0.062 in.) from case for 10s 300 C L S = Source TAB = Drain T Plastic body for 10s 260 C SOLD Features M Mounting torque (IXFK) 1.13/10 Nm/lb.in. d z Fast intrinsic diode z F Mounting force (IXFX) 20..120/4.5..27 Nm/lb. International standard packages C z Unclamped Inductive Switching (UIS) Weight TO-264 10 g rated TO-247 6 g z Low package inductance - easy to drive and to protect Symbol Test Conditions Characteristic Values Advantages z (T = 25C unless otherwise specified) Min. Typ. Max. Easy to mount J z Space savings BV V = 0V, I = 3mA 1000 V DSS GS D z High power density V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D I V = 30V, V = 0V 200 nA GSS GS DS Applications: I V = V 50 A DSS DS DSS z Switched-mode and resonant mode V = 0V T = 125C 2.5 mA GS J power supplies z R V = 10V, I = 0.5 I , Note 1 320 m DC-DC Converters DS(on) GS D D25 z Laser Drivers z AC and DC motor controls z Robotics and servo controls 2008 IXYS CORPORATION,All rights reserved DS99777C(4/08)IXFK32N100P IXFX32N100P Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 13 21 S fs DS D D25 C 14.2 nF iss C V = 0V, V = 25V, f = 1MHz 815 pF oss GS DS C 60 pF rss R Gate input resistance 1.50 Gi t Resistive Switching Times 50 ns d(on) t V = 10V, V = 0.5 V , I = 0.5 I 55 ns r GS DS DSS D D25 Millimeter Inches t R = 1 (External) 76 ns Dim. d(off) G Min. Max. Min. Max. A 4.82 5.13 .190 .202 t 43 ns f A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 225 nC g(on) b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q V = 10V, V = 0.5 V , I = 0.5 I 85 nC b2 2.90 3.09 .114 .122 gs GS DS DSS D D25 c 0.53 0.83 .021 .033 Q 94 nC gd D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.13 C/W e 5.46 BSC .215 BSC thJC J 0.00 0.25 .000 .010 R 0.15 C/W K 0.00 0.25 .000 .010 thCS L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Source-Drain Diode Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 Symbol Test Conditions Characteristic Values R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 (T = 25C unless otherwise specified) Min. Typ. Max. J T 1.57 1.83 .062 .072 I V = 0V 32 A TM S GS PLUS 247 (IXFX) Outline I Repetitive, pulse width limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 16A, -di/dt = 100A/s F Q 2.2 C RM V = 100V, V = 0V R GS I 15 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 PRELIMINARY TECHNICAL INFORMATION 2 b 1.14 1.40 .045 .055 The product presented herein is under development. The Technical Specifications offered are derived b 1.91 2.13 .075 .084 1 from data gathered during objective characterizations of preliminary engineering lots but also may yet b 2.92 3.12 .115 .123 2 contain some information supplied during a pre-production design evaluation. IXYS reserves the right C 0.61 0.80 .024 .031 to change limits, test conditions, and dimensions without notice. D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537