Q3-Class V = 1000V IXFK32N100Q3 DSS TM HiperFET I = 32A IXFX32N100Q3 D25 Power MOSFET R 320m DS(on) D t 300ns rr N-Channel Enhancement Mode G TO-264 Fast Intrinsic Rectifier (IXFK) S G D S Symbol Test Conditions Maximum Ratings Tab V T = 25 C to 150 C 1000 V DSS J V T = 25 C to 150 C, R = 1M 1000 V DGR J GS PLUS247 V Continuous 30 V GSS (IXFX) V Transient 40 V GSM I T = 25 C 32 A D25 C I T = 25 C, Pulse Width Limited by T 96 A DM C JM G D I T = 25 C 32 A Tab S A C E T = 25 C 2 J AS C G = Gate D = Drain dv/dt I I , V V , T 150 C 50 V/ns S = Source Tab = Drain S DM DD DSS J P T = 25 C 1250 W D C T -55 ... +150 C J T 150 C Features JM T -55 ... +150 C stg International Standard Packages Maximum Lead Temperature for Soldering 300 C L Low Intrinsic Gate Resistance T Plastic Body for 10s 260 C SOLD Avalanche Rated Low Package Inductance M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d Fast Intrinsic Rectifier F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Low R and Q DS(on) G Weight TO-264 10 g PLUS247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 3mA 1000 V DSS GS D Applications V V = V , I = 8mA 3.5 6.5 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 200 nA Battery Chargers GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 50 A DSS DS DSS GS Power Supplies T = 125 C 3 mA J DC Choppers Temperature and Lighting Controls R V = 10V, I = 0.5 I , Note 1 320 m DS(on) GS D D25 DS100300C(1/20) 2020 IXYS CORPORATION, All Rights Reserved IXFK32N100Q3 IXFX32N100Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 20 32 S fs DS D D25 C 10990 pF iss C V = 0V, V = 25V, f = 1MHz 745 pF oss GS DS C 67 pF rss R Gate Input Resistance 0.20 Gi t 45 ns d(on) Resistive Switching Times t 15 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 54 ns d(off) R = 1 (External) G t 12 ns f Q 195 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 60 nC gs GS DS DSS D D25 Q 78 nC gd R 0.10 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 32 A S GS I Repetitive, Pulse Width Limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 300 ns rr I = 16A, -di/dt = 100A/ s F Q 1.2 C RM V = 100V, V = 0V I R GS 12.3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537