TM TM Polar3 HiPerFET V = 600V IXFK80N60P3 DSS Power MOSFET I = 80A IXFX80N60P3 D25 R 77m DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 (IXFK) G Symbol Test Conditions Maximum Ratings D S V T = 25 C to 150 C 600 V DSS J Tab V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V GSS V Transient 40 V PLUS247 (IXFX) GSM I T = 25 C 80 A D25 C I T = 25 C, Pulse Width Limited by T 200 A DM C JM I T = 25 C40A A C E T = 25 C2J G AS C D Tab S P T = 25 C 1300 W D C dv/dt I I , V V , T 150C 35 V/ns G = Gate D = Drain S DM DD DSS J S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C Dynamic dv/dt Rating SOLD Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in d Fast Intrinsic Diode F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb C Low Q G Weight TO-264 10 g Low R DS(on) PLUS247 6 g Low Drain-to-Tab Capacitance Low Package Inductance Advantages Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 1mA 600 V DSS GS D V V = V , I = 8mA 3.0 5.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 200 nA GSS GS DS DC-DC Converters Battery Chargers I V = V , V = 0V 50 A DSS DS DSS GS Switch-Mode and Resonant-Mode T = 125C 4 mA J Power Supplies R V = 10V, I = 0.5 I , Note 1 77 m DS(on) GS D D25 Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications 2014 IXYS CORPORATION, All Rights Reserved DS100304B(04/14)IXFK80N60P3 IXFX80N60P3 Symbol Test Conditions Characteristic Values TO-264 AA Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 55 90 S fs DS D D25 C 13.1 nF iss C V = 0V, V = 25V, f = 1MHz 1240 pF oss GS DS C 5.0 pF rss R Gate Input Resistance 1.0 Gi Terminals: 1 - Gate t 48 ns d(on) Resistive Switching Times 2 - Drain 3 - Source t 25 ns r 4 - Drain V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 87 ns Dim. Millimeter Inches d(off) R = 1 (External) Min. Max. Min. Max. G t 8 ns A 4.82 5.13 .190 .202 f A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 190 nC g(on) b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 Q V = 10V, V = 0.5 V , I = 0.5 I 56 nC gs GS DS DSS D D25 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 Q 48 nC gd D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 R 0.096C/W thJC e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 R 0.15C/W thCS K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 Source-Drain Diode R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J TM PLUS 247 Outline I V = 0V 80 A S GS I Repetitive, Pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr I = 40A, -di/dt = 100A/ s F Q 1.4 C RM V = 100V, V = 0V R GS I 13.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537