X-On Electronics has gained recognition as a prominent supplier of IXFK88N30P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFK88N30P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFK88N30P IXYS

IXFK88N30P electronic component of IXYS
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Part No.IXFK88N30P
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET 88 Amps 300V 0.04 Rds
Datasheet: IXFK88N30P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 14.179 ea
Line Total: USD 14.18 
Availability - 268
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
268
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 14.179
10 : USD 13.079
25 : USD 10.23
50 : USD 10.23
100 : USD 9.823

4
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 17.85
2 : USD 14.294
4 : USD 13.51
100 : USD 13.258
1000 : USD 13.062

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Type
Width
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFK88N30P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFK88N30P and other electronic components in the MOSFETs category and beyond.

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TM TM Polar HiPerFET V = 300V IXFT88N30P DSS I = 88A Power MOSFET IXFH88N30P D25 R 40m DS(on) IXFK88N30P t 200ns rr TO-268 (IXFT) N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Tab Symbol Test Conditions Maximum Ratings TO-247(IXFH) V T = 25C to 150C 300 V DSS J V T = 25C to 150C, R = 1M 300 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D Tab S I T = 25C 88 A D25 C I External Lead Current Limit 75 A L(RMS) TO-264 (IXFK) I T = 25C, Pulse Width Limited by T 220 A DM C JM I T = 25C 60 A A C E T = 25C 2 J AS C G dV/dt I I , V V , T 150C 10 V/ns S DM DD DSS J D Tab S P T = 25C 600 W D C G = Gate D = Drain T -55 to +150 C J S = Source Tab = Drain T +150 C JM Features T -55 to +150 C stg T 1.6mm (0.063in) from Case for 10s 300 C L z International Standard Packages T Plastic Body for 10s 260 C z SOLD Fast Intrinsic Diode z M Mounting Torque (TO-247&TO-264) 1.13/10 Nm/lb.in. Avalanche Rated d z Low R and Q Weight TO-268 4 g DS(ON) G z Low Package Inductance TO-247 6 g TO-264 10 g Advantages z High Power Density z Easy to Mount Symbol Test Conditions Characteristic Values z Space Savings (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 300 V Applications DSS GS D V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D z DC-DC Coverters I V = 20V, V = 0V 100 nA z GSS GS DS Battery Chargers z I V = V , V = 0V 25 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 250 A J z DC Choppers R V = 10V, I = 0.5 I , Note 1 40 m z DS(on) GS D D25 AC and DC Motor Drives z Uninterrupted Power Supplies z High Speed Power Switching Applications 2009 IXYS CORPORATION, All Rights Reserved DS99216F(11/09)IXFT88N30P IXFH88N30P IXFK88N30P Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 40 60 S fs DS D D25 C 6300 pF iss C V = 0V, V = 25V, f = 1MHz 950 pF oss GS DS C 190 pF rss t 25 ns d(on) Resistive Switching Times t 24 ns r V = 10V, V = 0.5 V , I = 60A GS DS DSS D t 96 ns d(off) R = 3.3 (External) G t 25 ns f Millimeter Inches Dim. Q 180 nC g(on) Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q V = 10V, V = 0.5 V , I = 0.5 I 44 nC gs GS DS DSS D D25 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 90 nC gd b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 R 0.21 C/W thJC b2 2.90 3.09 .114 .122 R TO-247 0.21 C/W c 0.53 0.83 .021 .033 thCS D 25.91 26.16 1.020 1.030 TO-264 0.15 C/W E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 Source-Drain Diode L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. R 3.81 4.32 .150 .170 J R1 1.78 2.29 .070 .090 I V = 0V 88 A S 6.04 6.30 .238 .248 S GS T 1.57 1.83 .062 .072 I Repetitive, Pulse Width Limited by T 220 A SM JM TO-247 (IXFH) Outline V I = I , V = 0V, Note 1 1.5 V SD F S GS t 100 200 ns rr I = 25A, -di/dt = 100A/s, F V = 100V, V = 0V R GS Q 0 .6 C P RM 1 2 3 Note 1. Pulse test, t 300s, duty cycle, d 2%. e Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain TO-268 (IXFT) Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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