X-On Electronics has gained recognition as a prominent supplier of IXFN210N30X3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFN210N30X3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFN210N30X3 IXYS

IXFN210N30X3 electronic component of IXYS
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Part No.IXFN210N30X3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctX3Clas SOT-227B(mini
Datasheet: IXFN210N30X3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 48.958 ea
Line Total: USD 48.96 
Availability - 1
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 48.958
30 : USD 48.426

   
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We are delighted to provide the IXFN210N30X3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFN210N30X3 and other electronic components in the MOSFETs category and beyond.

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USAThe IXFN210N30X3 is a Miniature Dual N-Channel MOSFET Discrete manufactured by IXYS USA, Inc. It has a maximum drain-source voltage of 30V and a maximum drain-source on-state resistance of 14 mO. This device features an output current of 3A with a minimum RDS(on) of 10mO. It has a gate-source threshold voltage of 4V and is housed in a SOT-227B (Mini) package. Additionally, it is a fast switching device with a reverse transfer capacitance of 25 pF.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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