TM TM Polar3 HiPerFET V = 600V IXFA10N60P DSS Power MOSFET I = 10A IXFP10N60P D25 R 740m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 600 V DSS J TO-220 (IXFP) V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM G I T = 25 C10A D25 C D S I T = 25 C, Pulse Width Limited by T 25 A D (Tab) DM C JM I T = 25 C10A A C G = Gate D = Drain E T = 25 C 500 mJ AS C S = Source Tab = Drain dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 200 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L Fast Intrinsic Rectifier T Plastic Body for 10s 260 C Avalanche Rated SOLD Low R and Q DS(ON) G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-263 2.5 g TO-220 3.0 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 600 V DSS GS D V V = V , I = 1mA 3.0 5.5 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 30V, V = 0V 100 nA DC-DC Converters GSS GS DS Laser Drivers I V = V , V = 0V 25 A DSS DS DSS GS AC and DC Motor Drives T = 125C 500 A J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 740 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS99424G(6/18) IXFA10N60P IXFP10N60P Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 6 11 S fs DS D D25 C 1720 pF iss C V = 0V, V = 25V, f = 1MHz 160 pF oss GS DS C 14 pF rss t 23 ns d(on) Resistive Switching Times 1. Gate t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I 2. Drain GS DS DSS D D25 t 65 ns 3. Source d(off) R = 10 (External) 4. Drain G t 21 ns f Q 32 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 10 nC gd R 0.62 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 10 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 30 A E A SM JM oP A1 V I = I , V = 0V, Note 1 1.5 V H1 SD F S GS Q D2 D t 120 200 ns rr I = 5A, -di/dt = 200A/ s D1 F Q 320 nC RM E1 V = 100V R I 3 A RM A2 EJECTOR L1 L ee c 3X b e1e1 3X b2 1 - Gate Note 1. Pulse test, t 300 s, duty cycle, d 2%. 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537