TM TM TrenchT2 HiperFET V = 100V IXFA130N10T2 DSS I = 130A Power MOSFET IXFP130N10T2 D25 R 10.1m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 Fast Intrinsic Rectifier (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C, R = 1M 100 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D S D (Tab) I T = 25 C (Chip Capability) 130 A D25 C I External Lead Current Limit 120 A L(RMS) G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 300 A DM C JM S = Source Tab = Drain I T = 25 C65 A A C E T = 25 C 800 mJ AS C dV/dt I I , V V ,T 175 C 20 V/ns S DM DD DSS J Features P T = 25 C 360 W D C International Standard Packages T -55 ... +175 C J 175C Operating Temperature T 175 C JM High Current Handling Capability T -55 ... +175 C Fast Intrinsic Rectifier stg Dynamic dV/dt Rated T Maximum Lead Temperature for Soldering 300 C L Low R DS(on) T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Easy to Mount Weight TO-263 2.5 g Space Savings TO-220 3.0 g High Power Density Applications Symbol Test Conditions Characteristic Values DC-DC Converters (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Battery Charges J Switch-Mode and Resonant-Mode BV V = 0V, I = 250 A 100 V DSS GS D Power Supplies DC Choppers V V = V , I = 1mA 2.0 4.5 V GS(th) DS GS D AC Motor Drives I V = 20V, V = 0V 200 nA GSS GS DS Uninterruptible Power Supplies High Speed Power Switching I V = V , V = 0V 10 A DSS DS DSS GS Applications T = 150C 500 A J R V = 10V, I = 65A, Notes 1 & 2 10.1 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS100111B(11/18) IXFA130N10T2 IXFP130N10T2 Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 g V = 10V, I = 60A, Note 1 35 58 S L1 D1 fs DS D D 4 L2 H C 6600 pF A1 1 2 3 iss C V = 0V, V = 25V, f = 1MHz 640 pF b2 b oss GS DS L3 e e c 0.43 11.0 C 133 pF rss 0 0.34 8.7 t 16 ns d(on) Resistive Switching Times 0.66 16.6 A2 t 38 ns r V = 10V, V = 0.5 V , I = 65A GS DS DSS D 1 - Gate 0.20 5.0 0.12 3.0 t 24 ns 2,4 - Drain d(off) R = 3.3 (External) G 3 - Source 0.10 2.5 0.06 1.6 t 25 ns f Q 130 nC g(on) Q V = 10V, V = 0.5 V , I = 65A 35 nC gs GS DS DSS D Q 42 nC gd R 0.42 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 130 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 520 A SM JM E A oP A1 V I = 65A, V = 0V, Note 1 1.3 V SD F GS H1 Q t 100 ns rr D2 D I = 65A, V = 0V, F GS I 4.8 A D1 RM -di/dt = 100A/s, V = 50V R E1 Q 156 nC RM A2 EJECTOR PIN L1 L ee c 3X b e1e1 Notes: 1. Pulse test, t 300 s duty cycle, d 2%. 3X b2 1 - Gate 2. On through-hole packages, R Kelvin test contact DS(on) 2,4 - Drain 3 - Source location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537