TM IXFA 14N60P V = 600 V PolarHV HiPerFET DSS IXFH 14N60P I = 14 A D25 Power MOSFET IXFP 14N60P R 550 m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-263 (IXFA) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V DSS J G V T = 25 C to 150 C R = 1 M 600 V S DGR J GS (TAB) V Continuous 30 V GS V Tranisent 40 V GSM TO-247 (IXFH) I T = 25C14A D25 C I T = 25 C, pulse width limited by T 42 A DM C JM I T = 25C14A AR C E T = 25C23mJ AR C G D E T = 25 C 0.9 J S AS C dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G TO-220 (IXFP) P T = 25 C 300 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg (TAB) G D T 1.6 mm (0.062 in.) from case for 10 s 300 C S L T Plastic body for 10 s 260 C SOLD M Mounting torque (TO-3P,TO-220) 1.13/10 Nm/lb.in. d G = Gate D = Drain S = Source TAB = Drain Weight TO-247 6 g TO-220 4 g TO-263 2 g Features l International standard packages Symbol Test Conditions Characteristic Values l Unclamped Inductive Switching (UIS) (T = 25 C, unless otherwise specified) Min. Typ. Max. J rated BV V = 0 V, I = 250 A 600 V l DSS GS D Low package inductance - easy to drive and to protect V V = V , I = 4 mA 3.5 5.5 V GS(th) DS GS D I V = 30 V , V = 0 100 nA GSS GS DC DS Advantages I V = V 5 A DSS DS DSS l Easy to mount V = 0 V T = 125C50 A GS J l Space savings R V = 10 V, I = 0.5 I 450 550 m l DS(on) GS D D25 High power density Pulse test, t 300 s, duty cycle d 2 % DS99389E(02/06) 2006 IXYS All rights reserved IXFA 14N60P IXFH 14N60P IXFP 14N60P Symbol Test Conditions Characteristic Values TO-247 AD (IXFH) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 7 13 S fs DS D D25 C 2300 pF iss 1 2 3 C V = 0 V, V = 25 V, f = 1 MHz 215 pF oss GS DS C 13 pF rss t 23 ns d(on) t V = 10 V, V = 0.5 V , I = I 27 ns r GS DS DSS D D25 Terminals: 1 - Gate 2 - Drain t R = 10 (External) 70 ns 3 - Source Tab - Drain d(off) G Dim. Millimeter Inches t 26 ns f Min. Max. Min. Max. A 4.7 5.3 .185 .209 Q 38 nC g(on) A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 Q V = 10 V, V = 0.5 V , I = 0.5 I 14 nC 2 gs GS DS DSS D D25 b 1.0 1.4 .040 .055 Q 12 nC b 1.65 2.13 .065 .084 gd 1 b 2.87 3.12 .113 .123 2 R 0.42 C/W C .4 .8 .016 .031 thJC R (TO-220) 0.25 C/W D 20.80 21.46 .819 .845 thCs E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode Characteristic Values L1 4.50 .177 (T = 25 C, unless otherwise specified) J P 3.55 3.65 .140 .144 Symbol Test Conditions Min. Typ. Max. Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 I V = 0 V 14 A S 6.15 BSC 242 BSC S GS I Repetitive 42 A SM TO-220 (IXFP) Outline V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 14 A, -di/dt = 100 A/s 200 ns rr F I V = 100 V 6 A RM R Q 0.6 C RM TO-263 (IXFA) Outline Pins: 1 - Gate 2 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2