TM TM Polar3 HiPerFET V = 600V IXFA16N60P3 DSS Power MOSFET I = 16A IXFP16N60P3 D25 R 470m DS(on) IXFH16N60P3 N-Channel Enhancement Mode TO-263 (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM D S D (Tab) I T = 25 C16A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 40 A DM C JM I T = 25 C8A A C E T = 25 C 800 mJ AS C dv/dt I I , V V , T 150 C 35 V/ns G S DM DD DSS J D D (Tab) S P T = 25 C 347 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T Plastic Body for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb International Standard Packages C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in Fast Intrinsic Rectifier d Avalanche Rated Weight TO-263 2.5 g Low R and Q TO-220 3.0 g DS(ON) G Low Package Inductance TO-247 6.0 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Easy to Mount J Space Savings BV V = 0V, I = 1mA 600 V DSS GS D V V = V , I = 1.5mA 3.0 5.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A Power Supplies DSS DS DSS GS T = 125C 1.5 mA DC-DC Converters J Laser Drivers R V = 10V, I = 0.5 I , Note 1 470 m DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100419C(6/18) IXFA16N60P3 IXFP16N60P3 IXFH16N60P3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 10 17 S fs DS D D25 R Gate Input Resistance 2.3 Gi C 1830 pF iss C V = 0V, V = 25V, f = 1MHz 217 pF oss GS DS C 8.6 pF rss t 20 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 42 ns d(off) R = 5 (External) G t 8 ns f Q 36 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 9 nC gs GS DS DSS D D25 Q 13 nC gd R 0.36 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 16 A S GS I Repetitive, pulse Width Limited by T 48 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 8A, -di/dt = 100A/ s F Q 0.7 C RM V = 100V R I 7.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537