X-On Electronics has gained recognition as a prominent supplier of IXFP16N60P3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFP16N60P3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFP16N60P3 IXYS

IXFP16N60P3 electronic component of IXYS
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See Product Specifications
Part No.IXFP16N60P3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChHiPerFET-Polar3 TO-220AB/FP
Datasheet: IXFP16N60P3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.754 ea
Line Total: USD 5.75 
Availability - 260
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
260
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.754
3 : USD 5.18
5 : USD 4.102
12 : USD 3.878

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the IXFP16N60P3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFP16N60P3 and other electronic components in the MOSFETs category and beyond.

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TM TM Polar3 HiPerFET V = 600V IXFA16N60P3 DSS Power MOSFET I = 16A IXFP16N60P3 D25 R 470m DS(on) IXFH16N60P3 N-Channel Enhancement Mode TO-263 (IXFA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM D S D (Tab) I T = 25 C16A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 40 A DM C JM I T = 25 C8A A C E T = 25 C 800 mJ AS C dv/dt I I , V V , T 150 C 35 V/ns G S DM DD DSS J D D (Tab) S P T = 25 C 347 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C Features L T Plastic Body for 10s 260 C SOLD F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb International Standard Packages C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in Fast Intrinsic Rectifier d Avalanche Rated Weight TO-263 2.5 g Low R and Q TO-220 3.0 g DS(ON) G Low Package Inductance TO-247 6.0 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Easy to Mount J Space Savings BV V = 0V, I = 1mA 600 V DSS GS D V V = V , I = 1.5mA 3.0 5.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A Power Supplies DSS DS DSS GS T = 125C 1.5 mA DC-DC Converters J Laser Drivers R V = 10V, I = 0.5 I , Note 1 470 m DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100419C(6/18) IXFA16N60P3 IXFP16N60P3 IXFH16N60P3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 10 17 S fs DS D D25 R Gate Input Resistance 2.3 Gi C 1830 pF iss C V = 0V, V = 25V, f = 1MHz 217 pF oss GS DS C 8.6 pF rss t 20 ns d(on) Resistive Switching Times t 13 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 42 ns d(off) R = 5 (External) G t 8 ns f Q 36 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 9 nC gs GS DS DSS D D25 Q 13 nC gd R 0.36 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 16 A S GS I Repetitive, pulse Width Limited by T 48 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 8A, -di/dt = 100A/ s F Q 0.7 C RM V = 100V R I 7.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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