TM TM TrenchT2 HiperFET V = 100V IXFA180N10T2 DSS I = 180A Power MOSFET IXFP180N10T2 D25 R 6m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 Fast Intrinsic Rectifier (IXFA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXFP) V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C, R = 1M 100 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D S D (Tab) I T = 25 C (Chip Capability) 180 A D25 C I External Lead Current Limit 120 A L(RMS) G = Gate D = Drain I T = 25 C, Pulse Width Limited by T 450 A DM C JM S = Source Tab = Drain I T = 25 C90 A A C E T = 25 C 750 mJ AS C dV/dt I I , V V ,T 175 C 15 V/ns S DM DD DSS J Features P T = 25 C 480 W D C International Standard Packages T -55 ... +175 C J 175C Operating Temperature T 175 C JM High Current Handling Capability T -55 ... +175 C Fast Intrinsic Rectifier stg Dynamic dV/dt Rated T Maximum Lead Temperature for Soldering 300 C L Low R DS(on) T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Easy to Mount Weight TO-263 2.5 g Space Savings TO-220 3.0 g High Power Density Applications Symbol Test Conditions Characteristic Values Synchronous Rectification (T = 25 C Unless Otherwise Specified) Min. Typ. Max. DC-DC Converters J Battery Charges BV V = 0V, I = 250 A 100 V DSS GS D Switch-Mode and Resonant-Mode Power Supplies V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D DC Choppers I V = 20V, V = 0V 200 nA GSS GS DS AC Motor Drives Uninterruptible Power Supplies I V = V , V = 0V 10 A DSS DS DSS GS High Speed Power Switching T = 150C 750 A J Applications R V = 10V, I = 50A, Notes 1 & 2 6 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS100266E(11/18)IXFA180N10T2 IXFP180N10T2 Symbol Test Conditions Characteristic Values TO-263 Outline A (T = 25 C Unless Otherwise Specified) Min. Typ. Max. E E1 J C2 g V = 10V, I = 60A, Note 1 50 88 S L1 D1 fs DS D D 4 L2 H C 10.5 nF A1 1 2 3 iss C V = 0V, V = 25V, f = 1MHz 945 pF b2 b oss GS DS L3 e e c 0.43 11.0 C 100 pF rss 0 0.34 8.7 t 21 ns d(on) Resistive Switching Times 0.66 16.6 A2 t 37 ns r V = 10V, V = 0.5 V , I = 90A GS DS DSS D 1 - Gate 0.20 5.0 0.12 3.0 t 34 ns 2,4 - Drain d(off) R = 2 (External) G 3 - Source 0.06 1.6 0.10 2.5 t 13 ns f Q 185 nC g(on) Q V = 10V, V = 0.5 V , I = 90A 48 nC gs GS DS DSS D Q 52 nC gd R 0.31 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 180 A S GS TO-220 Outline I Repetitive, Pulse Width Limited by T 720 A SM JM E A oP A1 V I = 100A, V = 0V, Note 1 1.3 V SD F GS H1 Q t 66 ns rr D2 D I = 90A, V = 0V, F GS I 5.8 A D1 RM -di/dt = 100A/s, V = 50V R E1 Q 190 nC RM A2 EJECTOR PIN L1 L ee c 3X b e1e1 Notes: 1. Pulse test, t 300 s duty cycle, d 2%. 3X b2 1 - Gate 2. On through-hole packages, R Kelvin test contact DS(on) 2,4 - Drain 3 - Source location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537