TM X2-Class HiPerFET V = 650V IXFP34N65X2 DSS Power MOSFET I = 34A IXFH34N65X2 D25 R 100m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-220 (IXFP) Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V D DSS J S D (Tab) V T = 25 C to 150 C, R = 1M 650 V DGR J GS TO-247 V Continuous 30 V GSS (IXFH) V Transient 40 V GSM I T = 25 C34A D25 C I T = 25 C, Pulse Width Limited by T 68 A DM C JM G D D (Tab) I T = 25 C10A S A C E T = 25 C1J AS C G = Gate D = Drain dv/dt I I , V V , T 150C 50 V/ns S = Source Tab = Drain S DM DD DSS J P T = 25 C 540 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T Maximum Lead Temperature for Soldering 300 C L International Standard Packages T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low R and Q DS(ON) G M Mounting Torque 1.13 / 10 Nm/lb.in d Avalanche Rated Low Package Inductance Weight TO-220 3 g TO-247 6 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 650 V DSS GS D Applications V V = V , I = 2.5mA 3.5 5.0 V GS(th) DS GS D Switch-Mode and Resonant-Mode Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS DC-DC Converters I V = V , V = 0V 10 A PFC Circuits DSS DS DSS GS T = 125C 1.75 mA AC and DC Motor Drives J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 100 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100683E(6/18) IXFP34N65X2 IXFH34N65X2 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 12 20 S fs DS D D25 R Gate Input Resistance 0.8 Gi C 3230 pF iss C V = 0V, V = 25V, f = 1MHz 2000 pF oss GS DS C 2 pF rss Effective Output Capacitance C 130 pF o(er) Energy related V = 0V GS C 486 pF V = 0.8 V o(tr) Time related DS DSS t 37 ns d(on) Resistive Switching Times t 60 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 64 ns d(off) R = 10 (External) G t 30 ns f Q 56 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 19 nC gs GS DS DSS D D25 Q 18 nC gd R 0.23 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 34 A S GS I Repetitive, pulse Width Limited by T 136 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 164 ns rr I = 17A, -di/dt = 100A/ s F Q 1.2 C RM V = 100V R I 14.4 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537