TM TM Polar3 HiPerFET V = 300V IXFA36N30P3 DSS Power MOSFET I = 36A IXFP36N30P3 D25 R 110m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 300 V DSS J TO-220 (IXFP) V T = 25 C to 150 C, R = 1M 300 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25 C36A D25 C D S I T = 25 C, Pulse Width Limited by T 70 A D (Tab) DM C JM I T = 25 C18A A C G = Gate D = Drain E T = 25 C1J AS C S = Source Tab = Drain dv/dt I I , V V , T 150 C 10 V/ns S DM DD DSS J P T = 25 C 347 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L Fast Intrinsic Rectifier T Plastic Body for 10s 260 C Avalanche Rated SOLD Low R and Q DS(ON) G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-263 2.5 g TO-220 3.0 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 300 V DSS GS D V V = V , I = 250A 2.5 4.5 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 20V, V = 0V 100 nA DC-DC Converters GSS GS DS Laser Drivers I V = V , V = 0V 10 A DSS DS DSS GS AC and DC Motor Drives T = 125C 400 A J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 110 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100579B(6/18) IXFA36N30P3 IXFP36N30P3 Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 17 28 S fs DS D D25 R Gate Input Resistance 2.1 Gi C 2040 pF iss C V = 0V, V = 25V, f = 1MHz 355 pF oss GS DS C 6 pF rss 1. Gate t 16 ns d(on) 2. Drain Resistive Switching Times 3. Source t 39 ns r 4. Drain V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 36 ns d(off) R = 10 (External) G t 14 ns f Q 30 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 10 nC gs GS DS DSS D D25 Q 8 nC gd R 0.36 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 36 A S GS TO-220 Outline E A I Repetitive, Pulse Width Limited by T 144 A oP SM JM A1 H1 V I = I , V = 0V, Note 1 1.4 V Q SD F S GS D2 D t 125 ns D1 rr I = 18A, -di/dt = 200A/ s F Q 1.0 C E1 RM V = 100V R A2 EJECTOR I 17 A RM L1 L ee c 3X b e1e1 3X b2 1 - Gate Note 1. Pulse test, t 300 s, duty cycle, d 2%. 2,4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537