Preliminary Technical Information TM X3-Class HiPerFET V = 300V IXFA56N30X3 DSS Power MOSFET I = 56A IXFP56N30X3 D25 R 27m DS(on) IXFH56N30X3 N-Channel Enhancement Mode TO-263 (IXFA) Avalanche Rated G S D (Tab) TO-220 (IXFP) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 300 V DSS J V T = 25 C to 150 C, R = 1M 300 V DGR J GS V Continuous 20 V G GSS D V Transient 30 V S GSM D (Tab) I T = 25 C56A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 112 A DM C JM I T = 25 C28A A C E T = 25 C 700 mJ AS C G dv/dt I I , V V , T 150C 20 V/ns S DM DD DSS J D D (Tab) S P T = 25 C 320 W D C G = Gate D = Drain T -55 ... +150 C J S = Source Tab = Drain T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Features F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d International Standard Packages Low R and Q Weight TO-263 2.5 g DS(ON) G Avalanche Rated TO-220 3.0 g Low Package Inductance TO-247 6.0 g Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 1mA 300 V DSS GS D Space Savings V V = V , I = 1.5mA 2.5 4.5 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 500 A J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 21 27 m PFC Circuits DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100860B(6/18)IXFA56N30X3 IXFP56N30X3 IXFH56N30X3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 26 43 S fs DS D D25 R Gate Input Resistance 2.3 Gi C 3750 pF iss C V = 0V, V = 25V, f = 1MHz 560 pF oss GS DS C 3 pF rss Effective Output Capacitance C 210 pF o(er) Energy related V = 0V GS C 860 pF V = 0.8 V o(tr) Time related DS DSS t 21 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 64 ns d(off) R = 5 (External) G t 10 ns f Q 56 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 18 nC gs GS DS DSS D D25 Q 17 nC gd R 0.39 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 56 A S GS I Repetitive, pulse Width Limited by T 224 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 115 ns rr I = 28A, -di/dt = 100A/s F Q 580 nC RM V = 100V R I 10 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537