TM V = 800 V IXFP7N80PM PolarHV HiPerFET DSS I = 3.5 A D25 Power MOSFET R 1.44 DS(on) (Electrically Isolated Tab) t 250 ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings OVERMOLDED TO-220 (IXTP...M) OUTLINE V T = 25C to 150C 800 V DSS J V T = 25C to 150C R = 1 M 800 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C 3.5 A Isolated Tab D25 C G I T = 25C, pulse width limited by T 18 A D DM C JM S I T = 25C4A AR C E T = 25C20mJ AR C E T = 25C 300 mJ AS C G = Gate D = Drain S = Source dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 10 J G P T = 25C50W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C z stg Plastic overmolded tab for electrical isolation T 1.6 mm (0.062 in.) from case for 10 s 300 C L z Fast intrinsic diode T Plastic body for 10 s 260 C SOLD z International standard package z Unclamped Inductive Switching (UIS) M Mounting torque 1.13/10 Nm/lb.in. d rated Weight 3.0 g z Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. z J Easy to mount z Space savings BV V = 0 V, I = 250 A 800 V DSS GS D z High power density V V = V , I = 1 mA 3.0 5.0 V GS(th) DS GS D I V = 30 V, V = 0 V 100 nA GSS GS DS I V = V 25 A DSS DS DSS V = 0 V T = 125C 500 A GS J R V = 10 V, I = 3.5 A 1.44 DS(on) GS D Note 1 DS99598E(08/06) 2006 IXYS All rights reservedIXFP7N80PM ISOLATED TO-220 (IXFP...M) Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 3.5 A, Note 1 5 9.5 S fs DS D C 1890 pF iss C V = 0 V, V = 25 V, f = 1 MHz 133 pF oss GS DS 12 3 C 13 pF rss t 28 ns d(on) t V = 10 V, V = 0.5 V , I = 4 A 32 ns r GS DS DSS D t R = 10 (External) 55 ns d(off) G t 24 ns f Q 32 nC g(on) Q V = 10 V, V = 0.5 V , I = 6 A 12 nC gs GS DS DSS D Q 9nC gd Terminals: 1 - Gate 2 - Drain (Collector) R 2.5 C/W 3 - Source (Emitter) thJC Source-Drain Diode Characteristic Values (T = 25C unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 7 A S GS I Repetitive 18 A SM V I = I , V = 0 V, Note 1 1.5 V SD F S GS t I = 7 A, -di/dt = 100 A/s, 250 ns rr F Q V = 100 V, V = 0 V 0.3 C RM R GS I 3A RM Notes: 1) Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537