TM X3-Class HiPerFET V = 250V IXFP80N25X3 DSS Power MOSFET I = 80A IXFQ80N25X3 D25 R 16m DS(on) IXFH80N25X3 N-Channel Enhancement Mode TO-220 (IXFP) Avalanche Rated G D S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 250 V DSS J V T = 25 C to 150 C, R = 1M 250 V G DGR J GS D V Continuous 20 V S GSS D (Tab) V Transient 30 V GSM TO-247 (IXFH) I T = 25 C80A D25 C I T = 25 C, Pulse Width Limited by T 220 A DM C JM I T = 25 C40A A C E T = 25 C 1.2 J AS C G D D (Tab) dv/dt I I , V V , T 150C 20 V/ns S S DM DD DSS J P T = 25 C 390 W G = Gate D = Drain D C S = Source Tab = Drain -55 ... +150 C T J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages M Mounting Torque 1.13 / 10 Nm/lb.in d Low R and Q DS(ON) G Weight TO-220 3.0 g Avalanche Rated TO-3P 5.5 g Low Package Inductance TO-247 6.0 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 250 V DSS GS D V V = V , I = 1.5mA 2.5 4.5 V Applications GS(th) DS GS D I V = 20V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 5 A DSS DS DSS GS DC-DC Converters T = 125C 350 A J PFC Circuits AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 13 16 m DS(on) GS D D25 Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100753E(6/18)IXFP80N25X3 IXFQ80N25X3 IXFH80N25X3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 38 64 S fs DS D D25 R Gate Input Resistance 1.6 Gi C 5430 pF iss C V = 0V, V = 25V, f = 1MHz 890 pF oss GS DS C 1.6 pF rss Effective Output Capacitance C 320 pF o(er) Energy related V = 0V GS C 1410 pF V = 0.8 V o(tr) Time related DS DSS t 30 ns d(on) Resistive Switching Times t 17 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 65 ns d(off) R = 5 (External) G t 8 ns f Q 83 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSS D D25 Q 24 nC gd R 0.32 C/W thJC R TO-220 0.50 C/W thCS TO-247& TO-3P 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 80 A S GS I Repetitive, pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 120 ns rr I = 40A, -di/dt = 100A/ s F Q 600 nC RM V = 100V R I 10 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537