TM TM Polar3 HiPerFET V = 500V IXFA8N50P3 DSS Power MOSFET I = 8A IXFP8N50P3 D25 R 800m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXFA) G S Symbol Test Conditions Maximum Ratings D (Tab) V T = 25 C to 150 C 500 V DSS J TO-220 (IXFP) V T = 25 C to 150 C, R = 1M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25 C8A G D25 C D S I T = 25 C, Pulse Width Limited by T 20 A DM C JM D (Tab) I T = 25 C4A A C G = Gate D = Drain E T = 25 C 200 mJ AS C S = Source Tab = Drain dv/dt I I , V V , T 150 C 35 V/ns S DM DD DSS J P T = 25 C 180 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L Fast Intrinsic Rectifier T Plastic Body for 10s 260 C Avalanche Rated SOLD Low R and Q DS(ON) G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-263 2.5 g TO-220 3.0 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 500 V DSS GS D Switch-Mode and Resonant-Mode V V = V , I = 1.5mA 3.0 5.0 V Power Supplies GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA GSS GS DS Laser Drivers AC and DC Motor Drives I V = V , V = 0V 10 A DSS DS DSS GS Robotics and Servo Controls T = 125C 100 A J R V = 10V, I = 0.5 I , Note 1 800 m DS(on) GS D D25 2018 IXYS CORPORATION, All Rights Reserved DS100455B(6/18) IXFA8N50P3 IXFP8N50P3 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 4.6 7.6 S fs DS D D25 R Gate Input Resistance 6.0 Gi C 705 pF iss C V = 0V, V = 25V, f = 1MHz 90 pF oss GS DS C 4 pF rss t 13 ns d(on) Resistive Switching Times t 10 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 29 ns d(off) R = 10 (External) G t 8 ns f Q 13 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 4 nC gs GS DS DSS D D25 Q 5 nC gd R 0.69 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 8 A S GS I Repetitive, Pulse Width Limited by T 32 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 4A, -di/dt = 100A/ s F Q 0.7 C RM V = 100V R I 6.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537