TM
HiPerFET Power MOSFETs
IXFR 180N10 V = 100 V
DSS
TM
ISOPLUS247
I = 165 A
D25
(Electrically Isolated Back Surface) R = 8 m
DS(on)
t 250 ns
Single MOSFET Die
rr
Preliminary data
TM
ISOPLUS 247
Symbol Test Conditions Maximum Ratings
V T = 25C to 150C 100 V
DSS J
V T = 25C to 150C; R = 1 M 100 V
DGR J GS
V Continuous 20 V
GS
G
V Transient 30 V
GSM D
Isolated back surface*
I T = 25C (MOSFET chip capability) 165 A
D25 C
I External lead (current limit) 76 A
D(RMS)
I T = 25C, Note 1 720 A
DM C
G = Gate D = Drain
I T = 25C 180 A
AR C
S = Source
E T = 25C60mJ
AR C * Patent pending
E T = 25C3J
AS C
dv/dt I I , di/dt 100 A/s, V V 5 V/ns
S DM DD DSS
T 150C, R = 2
J G
Features
P T = 25C 400 W
D C
Silicon chip on Direct-Copper-Bond
T -55 ... +150 C
J
substrate
T 150 C
JM
- High power dissipation
T -55 ... +150 C
stg
- Isolated mounting surface
- 2500V electrical isolation
T 1.6 mm (0.063 in.) from case for 10 s 300 C
L
Low drain to tab capacitance(<25pF)
TM
Low R HDMOS process
V 50/60 Hz, RMS t = 1 min 2500 V~
DS (on)
ISOL
Rugged polysilicon gate cell structure
Weight 5 g
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
Symbol Test Conditions Characteristic Values
(T = 25C, unless otherwise specified)
J
DC-DC converters
min. typ. max.
Battery chargers
V V = 0 V, I = 3mA 100 V
Switched-mode and resonant-mode
DSS GS D
power supplies
V V = V , I = 8mA 2.0 4.0 V
GS(th) DS GS D
DC choppers
I V = 20 V, V = 0 100 nA AC motor control
GSS GS DS
Advantages
I V = V T = 25C 100 A
DSS DS DSS J
V = 0 V T = 125C2 mA
GS J
Easy assembly
R V = 10 V, I = 90A 8 m
DS(on) GS D
Space savings
Note 1
High power density
IXYS reserves the right to change limits, test conditions, and dimensions. 98584A (7/00)
2000 IXYS All rights reserved
1 - 2IXFR 180N10
Symbol Test Conditions Characteristic Values
ISOPLUS 247 (IXFR) OUTLINE
(T = 25C, unless otherwise specified)
J
min. typ. max.
g V = 10 V; I = 90A Note 2 60 90 S
fs DS D
C 9400 pF
iss
C V = 0 V, V = 25 V, f = 1 MHz 3200 pF
oss GS DS
C 1660 pF
rss
t 50 ns
d(on)
t V = 10 V, V = 0.5 V , I = 90A 90 ns
r GS DS DSS D
t R = 1 (External), 140 ns
d(off) G
1 Gate, 2 Drain (Collector)
t 65 ns
f 3 Source (Emitter)
4 no connection
Q 400 nC
g(on)
Dim. Millimeter Inches
Q V = 10 V, V = 0.5 V , I = 90A 65 nC
gs GS DS DSS D
Min. Max. Min. Max.
Q 220 nC A 4.83 5.21 .190 .205
gd
A 2.29 2.54 .090 .100
1
A 1.91 2.16 .075 .085
2
R 0.30 K/W
thJC
b 1.14 1.40 .045 .055
R 0.15 K/W
b 1.91 2.13 .075 .084
thCK 1
b 2.92 3.12 .115 .123
2
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
Source-Drain Diode Characteristic Values
e 5.45 BSC .215 BSC
(T = 25C, unless otherwise specified)
L 19.81 20.32 .780 .800
J
L1 3.81 4.32 .150 .170
Symbol Test Conditions min. typ. max.
Q 5.59 6.20 .220 .244
R 4.32 4.83 .170 .190
I V = 0 V 180 A
S GS
S 13.21 13.72 .520 .540
T 15.75 16.26 .620 .640
I Repetitive; 720 A
SM
U 1.65 3.03 .065 .080
pulse width limited by T
JM
V I = 100A, V = 0 V, Note 1 1.5 V
SD F GS
t 250 ns
rr
I = 50A,-di/dt = 100 A/s, V = 100 V
Q 1.1 C
F R
RM
I 13 A
RM
Note: 1. Pulse width limited by T
JM
2. Pulse test, t 300 s, duty cycle d 2 %
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
2000 IXYS All rights reserved
2 - 2
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025