TM V = 1200V IXFR20N120P Polar Power MOSFET DSS I = 13A TM HiPerFET D25 R 630m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode ISOPLUS247 (IXFR) Symbol Test Conditions Maximum Ratings E153432 V T = 25C to 150C 1200 V DSS J V T = 25C to 150C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C13A Isolated Tab D25 C I T = 25C, pulse width limited by T 50 A DM C JM I T = 25C10A G = Gate D = Drain A C S = Source E T = 25C1J AS C dV/dt I I , V V ,T 150C 15 V/ns S DM DD DSS J Features P T = 25C 290 W D C Silicon chip on Direct-Copper-Bond T -55 ... +150 C J substrate - High power dissipation T 150 C JM - Isolated mounting surface T -55 ... +150 C - 2500V electrical isolation stg Low drain to tab capacitance(<30pF) T Maximum lead temperature for soldering 300 C TM L Low R HDMOS process DS (on) Rugged polysilicon gate cell structure T Plastic body for 10s 260 C SOLD Unclamped Inductive Switching (UIS) rated V 50/60 Hz, RMS, 1 minute 2500 V~ ISOL Fast intrinsic Rectifier F Mounting force 20..120/4.5..27 N/lb. C Advantages Weight 5g Easy assembly Space savings High power density Symbol Test Conditions Characteristic Values Applications: (T = 25C, unless otherwise specified) Min. Typ. Max. J z High Voltage Switched-mode and BV V = 0V, I = 1mA 1200 V DSS GS D resonant-mode power supplies z High Voltage Pulse Power Applications V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D z High Voltage Discharge circuits in I V = 30V, V = 0V 200 nA Lasers Pulsers, Spark Igniters, RF GSS GS DS Generators I V = V 25 A z DSS DS DSS High Voltage DC-DC converters V = 0V T = 125C 5 mA z GS J High Voltage DC-AC inverters R V = 10V, I = 10A, Note 1 630 m DS(on) GS D 2008 IXYS CORPORATION, All rights reserved DS99888A (04/08)IXFR20N120P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXFR) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 10A, Note 1 10 16 S fs DS D C 11.1 nF iss C V = 0V, V = 25V, f = 1MHz 600 pF oss GS DS C 60 pF rss R Gate input resistance 1.60 Gi t Resistive Switching Times 49 ns d(on) t V = 10V, V = 0.5 V , I = 10A 45 ns r GS DS DSS D t R = 1 (External) 72 ns d(off) G t 70 ns f Q 193 nC g(on) Q V = 10V, V = 0.5 V , I = 10A 74 nC gs GS DS DSS D Q 85 nC gd R 0.43 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 20 A S GS I Repetitive, pulse width limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 10A, -di/dt = 100A/s F Q 0.84 C RM V = 100V, V = 0V R GS I 9 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537