TM V = 1000V IXFR26N100P Polar Power MOSFET DSS I = 15A TM HiPerFET D25 R 430m DS(on) N-Channel Enhancement Mode t 300ns rr Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings ISOPLUS247 (IXFR) V T = 25C to 150C 1000 V DSS J E153432 V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C15A D25 C I T = 25C, pulse width limited by T 65 A Isolated Tab DM C JM I T = 25C13A AR C E T = 25C1J AS C G = Gate D = Drain dV/dt I I , V V ,T 150C 15 V/ns S = Source S DM DD DSS J P T = 25C 290 W D C T -55 ... +150 C J Features T 150 C JM Silicon chip on Direct-Copper-Bond T -55 ... +150 C stg substrate - High power dissipation T Maximum lead temperature for soldering 300 C L - Isolated mounting surface T Plastic body for 10s 260 C - 2500V electrical isolation SOLD Low drain to tab capacitance(<30pF) V 50/60 Hz, RMS, 1 minute 2500 V~ Rugged polysilicon gate cell structure ISOL Unclamped Inductive Switching (UIS) F Mounting force 20..120/4.5..27 N/lb. C rated Fast intrinsic Rectifier Weight 5g Applications Switched-mode and resonant-mode power supplies DC-DC converters Laser Drivers Symbol Test Conditions Characteristic Values AC and DC motor controls (T = 25C, unless otherwise specified) Min. Typ. Max. J Robotics and servo controls BV V = 0V, I = 3mA 1000 V DSS GS D Advantages V V = V , I = 1mA 3.5 6.5 V Easy assembly GS(th) DS GS D Space savings I V = 30V, V = 0V 200 nA High power density GSS GS DS I V = V 25 A DSS DS DSS V = 0V T = 125C 2 mA GS J R V = 10V, I = 13A, Note 1 430 m DS(on) GS D 2008 IXYS CORPORATION, All rights reserved DS99882A(4/08)IXFR26N100P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXFR) Outline (T = 25C unless otherwise specified) Min. Typ. Max. J g V = 20V, I = 13A, Note 1 13 22 S fs DS D C 11.9 nF iss C V = 0V, V = 25V, f = 1MHz 690 pF oss GS DS C 60 pF rss R Gate input resistance 1.50 Gi t Resistive Switching Times 45 ns d(on) t V = 10V, V = 0.5 V , I = 13A 45 ns r GS DS DSS D t R = 1 (External) 72 ns d(off) G t 50 ns f Q 197 nC g(on) Q V = 10V, V = 0.5 V , I = 13A 76 nC gs GS DS DSS D Q 85 nC gd R 0.43 C/W thJC R 0.15 C/W thCS Source-Drain Diode Characteristic Values T = 25C unless otherwise specified) Min. Typ. Max. J I V = 0V 26 A S GS I Repetitive, pulse width limited by T 104 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 13A, -di/dt = 100A/s F Q 1.2 C RM V = 100V, V = 0V R GS I 12 A RM Note 1: Pulse test, t 300s duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537