TM TM Polar HiperFET V = 1200V IXFR26N120P DSS Power MOSFET I = 15A D25 R 550m DS(on) t 300ns (Electrically Isolated Tab) rr N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1200 V DSS J V T = 25 C to 150 C, R = 1M 1200 V DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM Isolated Tab D S I T = 25 C 15 A D25 C I T = 25 C, Pulse Width Limited by T 60 A DM C JM G = Gate D = Drain I T = 25 C 13 A A C S = Source E T = 25 C 1.5 J AS C dv/dt I I , V V , T 150 C 15 V/ns S DM DD DSS J Features P T = 25 C 320 W D C Silicon Chip on Direct-Copper Bond T -55 ... +150 C J (DCB) Substrate T 150 C JM Isolated Mounting Surface T -55 ... +150 C stg Low Intrinsic Gate Resistance T Maximum Lead Temperature for Soldering 300 C L 2500V~ Electrical Isolation T Plastic Body for 10s 260 C SOLD International Standard Package V 50/60 Hz, 1 Minute 2500 V Fast Recovery Rectifier ISOL Avalanche Rated F Mounting Force 20..120/4.5..27 N/lb C Low Package Inductance Weight 5 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 1200 V DSS GS D High Voltage Switch-mode and V V = V , I = 1mA 3.5 6.5 V Resonant-Mode Power Supplies GS(th) DS GS D High Voltage Pulse Power Applications I V = 30V, V = 0V 200 nA GSS GS DS High Voltage Discharge Circuits in I V = V , V = 0V 50 A Lasers Pulsers, Spark Igniters, RF DSS DS DSS GS T = 125C 5 mA Generators J High Voltage DC-DC Converters R V = 10V, I = 13A, Note 1 550 m DS(on) GS D High Voltage DC-AC Inverters 2014 IXYS CORPORATION, All Rights Reserved DS99886B(02/14) IXFR26N120P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXFR) Outline (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 13A, Note 1 13 21 S fs DS D C 14 nF iss C V = 0V, V = 25V, f = 1MHz 725 pF oss GS DS C 50 pF rss R Gate Input Resistance 1.5 Gi t 56 ns d(on) Resistive Switching Times t 55 ns r V = 10V, V = 0.5 V , I = 13A b A1 GS DS DSS D E t 76 ns c b1 b2 d(off) R = 1 (External) G t 58 ns 1 = Gate f 2,4 = Drain Q 225 nC g(on) 3 = Source Q V = 10V, V = 0.5 V , I = 13A 87 nC gs GS DS DSS D Q 98 nC gd R 0.39 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 26 A S GS I Repetitive, Pulse Width Limited by T 104 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 13A, -di/dt = 100A/ s F Q 1.3 C RM V = 100V, V = 0V R GS I 12.0 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537