TM Polar Power MOSFET V = 500V IXFR64N50P DSS TM I = 37A HiPerFET D25 R 95m DS(on) t 200ns (Electrically Isolated Back Surface) rr N-Channel Enhancement Mode Avalanche Rated ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C37A D25 C Isolated Tab I T = 25C, pulse width limited by T 150 A DM C JM I T = 25C64A A C E T = 25C 2.5 J AS C G = Gate D = Drain S = Source dV/dt I I , V V , T 150C 20 V/ns S DM DD DSS J P T = 25C 300 W D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg International Standard Package T 1.6mm (0.062 in.) from Case for 10s 300 C Fast Intrinsic Rectifier L T Plastic Body for 10s 260 C SOLD Avalanche Rated V 50/60 Hz, RMS t = 1min 2500 V~ Low R and Q ISOL DS(ON) G Low Package Inductance I 1mA t = 1s 3000 V~ ISOL M Mounting Force 20..120 / 4.5..27 N/lb. d Advantages Weight 5 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 500 V DSS GS D Switched-Mode and Resonant-Mode Power Supplies V V = V , I = 8mA 3.0 5.5 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 200 nA GSS GS DS Laser Drivers AC and DC Motor Drives I V = V , V = 0V 25 A DSS DS DSS GS Robotics and Servo Controls T = 125C 1 mA J R V = 10V, I = 32A, Note 1 95 m DS(on) GS D 2009 IXYS CORPORATION, All Rights Reserved DS99412F(5/09) IXFR64N50P Symbol Test Conditions Characteristic Values ISOPLUS247 (IXFR) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 32A, Note 1 30 50 S fs DS D C 9700 nF iss C V = 0V, V = 25V, f = 1MHz 970 pF oss GS DS C 30 pF rss t 30 ns d(on) Resistive Switching Times t 25 ns r V = 10V, V = 0.5 V , I = 32A GS DS DSS D t 85 ns d(off) R = 2 (External) G t 22 ns f Q 150 nC g(on) Q V = 10V, V = 0.5 V , I = 32A 50 nC gs GS DS DSS D Q 50 nC gd R 0.42 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 64 A S GS I Repetitive, Pulse Width Limited by T 250 A SM JM V I = 64A, V = 0V, Note 1 1.5 V SD F GS t 200 ns rr I = 25A, -di/dt = 100A/s F Q 0.6 C RM V = 100V, V = 0V R GS I 6.0 A RM Note 1: Pulse Test, t 300s Duty Cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537