Q3-Class V = 500V IXFR80N50Q3 DSS TM HiperFET I = 50A D25 Power MOSFET R 72m D DS(on) t 250ns rr (Electrically Isolated Tab) G N-Channel Enhancement Mode S Fast Intrinsic Rectifier ISOPLUS247 E153432 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS V Continuous 30 V GSS G Isolated Tab D V Transient 40 V GSM S I T = 25 C 50 A D25 C I T = 25 C, Pulse Width Limited by T 240 A G = Gate D = Drain DM C JM S = Source I T = 25 C 80 A A C E T = 25 C 5 J AS C dv/dt I I , V V , T 150 C 50 V/ns S DM DD DSS J P T = 25 C 570 W Features D C T -55 ... +150 C J Silicon Chip on Direct-Copper Bond T 150 C JM (DCB) Substrate T -55 ... +150 C stg Isolated Mounting Surface T Maximum Lead Temperature for Soldering 300 C Low Intrinsic Gate Resistance L 2500V~ Electrical Isolation T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Rectifier V 50/60 Hz, 1 Minute 2500 V ISOL Avalanche Rated Low Package Inductance F Mounting Force 20..120/4.5..27 N/lb. C Weight 5 g Advantages High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Applications J BV V = 0V, I = 3mA 500 V DSS GS D DC-DC Converters Battery Chargers V V = V , I = 8mA 3.5 6.5 V GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 200 nA Power Supplies GSS GS DS DC Choppers I V = V , V = 0V 50 A DSS DS DSS GS Temperature and Lighting Controls T = 125 C 2 mA J R V = 10V, I = 40A, Note 1 72 m DS(on) GS D DS100323B(12/19) 2019 IXYS CORPORATION, All Rights Reserved IXFR80N50Q3 Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 40A, Note 1 35 55 S fs DS D C 10 nF iss C V = 0V, V = 25V, f = 1MHz 1260 pF oss GS DS C 115 pF rss R Gate Input Resistance 0.15 Gi t 30 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 40A GS DS DSS D t 43 ns d(off) R = 1 (External) G t 15 ns f Q 200 nC g(on) Q V = 10V, V = 0.5 V , I = 40A 77 nC gs GS DS DSS D Q 90 nC gd R 0.22 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 80 A S GS I Repetitive, Pulse Width Limited by T 320 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr I = 40A, -di/dt = 100A/ s F Q 1.8 C RM V = 100V, V = 0V I R GS 15.6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537