X-On Electronics has gained recognition as a prominent supplier of IXFT120N25X3HV MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFT120N25X3HV MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFT120N25X3HV IXYS

IXFT120N25X3HV electronic component of IXYS
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See Product Specifications
Part No.IXFT120N25X3HV
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet: IXFT120N25X3HV Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.884 ea
Line Total: USD 16.88 
Availability - 23
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 16.884
2 : USD 13.468
4 : USD 12.726
30 : USD 12.586

   
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We are delighted to provide the IXFT120N25X3HV from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFT120N25X3HV and other electronic components in the MOSFETs category and beyond.

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The IXFT120N25X3HV is an N-Channel Ultra Junction MOSFET Transistor manufactured by IXYS. It is a high voltage transistor containing three distinct MOSFETs and is housed in the industry-standard TO-268AA package. This device has an absolute maximum voltage rating of 1200V and a rated continuous drain current of 25A. It has an extremely low on-state resistance (RDS-ON) of just 380mO and superior drain-source breakdown voltage (VBR) of 1625V. Due to its high figure of merit, high efficiency, low gate charge, low on-state resistance, and low source-drain capacitance, the IXFT120N25X3HV is ideal for use in a variety of electronic power applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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