TM HiPerRF V = 500V IXFH12N50F DSS I = 12A Power MOSFETs IXFT12N50F D25 R 400m F-Class: MegaHertz Switching DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g Intrinsic R , High dV/dt, Low t TO-247 (IXFH) g rr Symbol Test Conditions Maximum Ratings TAB V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 20 V GSS TO-268 (IXFT) V Transient 30 V GSM I T = 25C12A D25 C I T = 25C, Pulse Width Limited by T 48 A DM C JM G I T = 25C12A S AR C E T = 25C 300 mJ TAB AS C dV/dt I I , di/dt < 100A/ s, V V 20 V/ns S DM DD DSS G = Gate D = Drain T 150C, R = 2 S = Source TAB = Drain J G P T = 25C 180 W D C Features T -55 ... +150 C J T 150 C z JM RF capable MOSFETs z Double metal process for low gate T -55 ... +150 C stg resistance T Maximum Lead Temperature for Soldering 300 C z TM L Low R DHMOS process DS(ON) z Rugged polysilicon gate cell structure T Plastic Body for 10s 260 C SOLD z Unclamped Inductive Switching (UIS) M Mounting Torque (TO-247) 1.13/10 Nm/lb.in. d rated z Low package inductance Weight TO-247 6 g z TO-268 4 g Fast intrinsic rectifier Applications z DC-DC converters Symbol Test Conditions Characteristic Values z Switched-mode and resonant-mode (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J power supplies, >500kHz switching z DC choppers BV V = 0V, I = 250A 500 V DSS GS D z 13.5 MHz industrial applications V V = V , I = 2.5mA 3.0 5.5 V z GS(th) DS GS D Pulse generation z Laser drivers I V = 20V, V = 0V 100 nA GSS GS DS z RF amplifiers I V = 0.8 V 50 A DSS DS DSS Advantages V = 0V T = 125C 1.5 mA GS J R V = 10V, I = 0.5 I , Note 1 400 m z DS(on) GS D D25 Space savings z High power density 2004 IXYS CORPORATION, All Rights Reserved DS98737B(02/04)IXFH12N50F IXFT12N50F Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. TO-247 (IXFH) Outline J g V = 10V, I = 0.5 I , Note 6 10 S fs DS D D25 C 1870 pF iss C V = 0V, V = 25V, f = 1MHz 290 pF oss GS DS P C 90 pF rss t 11 ns d(on) Resistive Switching Times t 14 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 28 ns d(off) R = 4.7 (External) G t 8 ns e f Dim. Millimeter Inches Q 54 nC g(on) Min. Max. Min. Max. Q V = 10V, V = 0.5 V , I = 0.5 I 18 nC A 4.7 5.3 .185 .209 gs GS DS DSS D D25 A 2.2 2.54 .087 .102 1 Q 25 nC gd A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 R 0.65 C/W thJC b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 R (TO-247) 0.21 C/W 2 thCS C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode Characteristic Values L1 4.50 .177 T = 25C Unless Otherwise Specified) Min. Typ. Max. J P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 I V = 0V 12 A S GS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC I Repetitive, Pulse Width Limited by T 48 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr TO-268 Outline I = 12A, -di/dt = 100A/s F Q 0.8 C RM V = 100V, V = 0V R GS I 6.5 A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % Min Recommended Footprint IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537