TM IXFH 140N10P V = 100 V PolarHV HiPerFET DSS IXFT 140N10P I = 140 A D25 Power MOSFETs R 11 m DS(on) N-Channel Enhancement Mode t 150 ns rr Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXFH) V T = 25 C to 175 C 100 V DSS J V T = 25 C to 175 C R = 1 M 100 V DGR J GS V Continuous 20 V GS V Transient 30 V GSM G D (TAB) D S I T = 25 C 140 A D25 C I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 300 A DM C JM TO-268 (IXFT) I T = 25C60A AR C E T = 25C80mJ AR C E T = 25 C 2.5 J AS C G S D (TAB) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150C, R = 4 J G G = Gate D = Drain S = Source TAB = Drain P T = 25 C 600 W D C T -55 ... +175 C J T 175 C JM T -55 ... +150 C stg Features T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10s 260 C SOLD l International standard packages l M Mounting torque (TO-247) 1.13/10 Nm/lb.in. Unclamped Inductive Switching (UIS) d rated Weight TO-247 6.0 g l Low package inductance TO-268 5.0 g - easy to drive and to protect Advantages Symbol Test Conditions Characteristic Values l (T = 25 C, unless otherwise specified) Min. Typ. Max. Easy to mount J l Space savings BV V = 0 V, I = 250 A 100 V DSS GS D l High power density V V = V , I = 4.0 mA 3.0 5.0 V GS(th) DS GS D I V = 20 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS V = 0 V T = 175 C 500 A GS J R V = 10 V, I = 0.5 I 11 m DS(on) GS D D25 V = 15 V, I = 300 A 9 m GS D Note 1 DS99213E(01/06) 2006 IXYS All rights reservedIXFH 140N10P IXFT 140N10P Symbol Test Conditions Characteristic Values TO-247 AD Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , Note 1 45 65 S fs DS D D25 C 4700 pF iss 1 2 3 C V = 0 V, V = 25 V, f = 1 MHz 1850 pF oss GS DS C 600 pF rss t 35 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 50 ns r GS DS DSS D t R = 4 (External) 85 ns d(off) G Terminals: 1 - Gate 2 - Drain t 26 ns 3 - Source Tab - Drain f Dim. Millimeter Inches Q 155 nC g(on) Min. Max. Min. Max. Q V = 10 V, V = 0.5 V , I = 0.5 I 33 nC A 4.7 5.3 .185 .209 gs GS DS DSS D D25 A 2.2 2.54 .087 .102 1 Q 85 nC A 2.2 2.6 .059 .098 gd 2 b 1.0 1.4 .040 .055 R 0.25 C/W b 1.65 2.13 .065 .084 thJC 1 b 2.87 3.12 .113 .123 2 R (TO-247) 0.21 C/W thCS C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Source-Drain Diode Characteristic Values L1 4.50 .177 (T = 25 C, unless otherwise specified) J P 3.55 3.65 .140 .144 Symbol Test Conditions Min. Typ. Max. Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 I V = 0 V 140 A S GS S 6.15 BSC 242 BSC I Repetitive 300 A TO-268 Outline SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 150 200 ns rr F Q V = 50 V, V = 0 V 0.8 C RM R GS I 6A RM Note 1: Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2