X-On Electronics has gained recognition as a prominent supplier of IXFT180N20X3HV MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFT180N20X3HV MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFT180N20X3HV IXYS

IXFT180N20X3HV electronic component of IXYS
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Part No.IXFT180N20X3HV
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctn X3Class TO-268AA
Datasheet: IXFT180N20X3HV Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 16.786 ea
Line Total: USD 16.79 
Availability - 24
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
24
Ship by Fri. 29 Nov to Tue. 03 Dec
MOQ : 1
Multiples : 1
1 : USD 16.786
3 : USD 15.862
30 : USD 15.638

   
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We are delighted to provide the IXFT180N20X3HV from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFT180N20X3HV and other electronic components in the MOSFETs category and beyond.

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InternationalThe IXFT180N20X3HV is a MOSFET DiscMSFT NChUltrJnctn X3Class, manufactured by IXYS International. It is a vertical, insulated-gate bipolar transistor (IGBT) which is supplied in a TO-268AA surface-mountable package. This IGBT has a Collector-Emitter voltage (Vce) of 600 volts, a nominal Gate-Emitter voltage (Vge) of 20 volts, and provides maximum junction temperature (Tj) of 150°C. This part is suitable for applications such as motor control, AC/DC and DC/DC converters, and other high voltage/high frequency switching applications. In addition, the IXFT180N20X3HV has an optimized anode-cathode body diode with an enhanced Figure of Merit (FOM).

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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