TM TM Polar3 HiperFET V = 500V IXFT50N50P3 DSS I = 50A Power MOSFET IXFQ50N50P3 D25 R 125m DS(on) IXFH50N50P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J G V T = 25 C to 150 C, R = 1M 500 V DGR J GS D V Continuous 30 V S GSS D (Tab) V Transient 40 V GSM I T = 25 C 50 A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 150 A DM C JM I T = 25 C25 A A C E T = 25 C 500 mJ AS C G dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J D D (Tab) S P T = 25 C 960 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C S = Source Tab = Drain JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Fast Intrinsic Rectifier M Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in Avalanche Rated d Low R and Q DS(ON) G Weight TO-268 4.0 g Low Package Inductance TO-3P 5.5 g TO-247 6.0 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 1mA 500 V DSS GS D V V = V , I = 4mA 3.0 5.0 V Switch-Mode and Resonant-Mode GS(th) DS GS D Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS DC-DC Converters Laser Drivers I V = V , V = 0V 25 A DSS DS DSS GS AC and DC Motor Drives T = 125C 1.5 mA J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 125 m DS(on) GS D D25 2017 IXYS CORPORATION, All Rights Reserved DS100461C(3/17)IXFT50N50P3 IXFQ50N50P3 IXFH50N50P3 Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 27 45 S fs DS D D25 C 4335 pF iss C V = 0V, V = 25V, f = 1MHz 540 pF oss GS DS C 12 pF rss R Gate Input Resistance 1.4 Gi t 25 ns d(on) Resistive Switching Times t 8 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 53 ns d(off) R = 2 (External) t 10 ns G f Q 85 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 21 nC gs GS DS DSS D D25 Q 30 nC gd R 0.13 C/W thJC R (TO-247 & TO-3P) 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 50 A S GS TO-247 Outline I Repetitive, Pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr P I = 25A, -di/dt = 100A/ s 1 2 3 F I 12 A RM V = 100V, V = 0V R GS Q 880 nC RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. e Terminals: 1 - Gate 2 - Drain 3 - Source TO-268 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Terminals: 1 - Gate 2,4 - Drain 3 - Source P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537