TM TM Polar3 HiperFET V = 600V IXFT50N60P3 DSS I = 50A Power MOSFET IXFQ50N60P3 D25 R 160m DS(on) IXFH50N60P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V DSS J G V T = 25 C to 150 C, R = 1M 600 V DGR J GS D V Continuous 30 V S GSS D (Tab) V Transient 40 V GSM I T = 25 C 50 A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 125 A DM C JM I T = 25 C25 A A C E T = 25 C1 J AS C G dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J D D (Tab) S P T = 25 C 1040 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C S = Source Tab = Drain JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in d Fast Intrinsic Rectifier Avalanche Rated Weight TO-268 4.0 g TO-3P 5.5 g Low R and Q DS(ON) G TO-247 6.0 g Low Package Inductance Advantages High Power Density Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Easy to Mount J Space Savings BV V = 0V, I = 1mA 600 V DSS GS D V V = V , I = 4mA 3.0 5.0 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 25 A DSS DS DSS GS Power Supplies T = 125C 2 mA J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 160 m Laser Drivers DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2014 IXYS CORPORATION, All Rights Reserved DS100310B(04/14)IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 32 55 S fs DS D D25 C 6300 pF iss C V = 0V, V = 25V, f = 1MHz 630 pF oss GS DS C 2.5 pF rss R Gate Input Resistance 1.0 Gi t 31 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 62 ns d(off) R = 1 (External) t 17 ns G f Q 94 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 27 nC gs GS DS DSS D D25 Q 23 nC gd R 0.12 C/W thJC R (TO-247 & TO-3P) 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 50 A S GS TO-247 Outline I Repetitive, Pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 250 ns rr P I = 25A, -di/dt = 100A/ s 1 2 3 F I 11 A RM V = 100V, V = 0V R GS Q 1.1 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. e Terminals: 1 - Gate 2 - Drain 3 - Source TO-268 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 Terminals: 1 - Gate 2,4 - Drain L1 4.50 .177 3 - Source P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537