TM TM Polar3 HiperFET V = 300V IXFT94N30P3 DSS I = 94A Power MOSFET IXFQ94N30P3 D25 R 36m DS(on) IXFH94N30P3 N-Channel Enhancement Mode TO-268 (IXFT) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 300 V DSS J G V T = 25 C to 150 C, R = 1M 300 V DGR J GS D V Continuous 20 V S GSS D (Tab) V Transient 30 V GSM I T = 25 C 94 A D25 C TO-247 (IXFH) I T = 25 C, Pulse Width Limited by T 235 A DM C JM I T = 25 C47 A A C E T = 25 C 2.5 J AS C G dv/dt I I , V V , T 150C 35 V/ns S DM DD DSS J D D (Tab) S P T = 25 C 1040 W D C T -55 ... +150 C J G = Gate D = Drain T 150 C S = Source Tab = Drain JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD Fast Intrinsic Rectifier M Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in Avalanche Rated d Low R and Q DS(ON) G Weight TO-268 4.0 g Low Package Inductance TO-3P 5.5 g TO-247 6.0 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 1mA 300 V DSS GS D V V = V , I = 4mA 3.0 5.0 V Applications GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS DC-DC Converters T = 125C 750 A J Laser Drivers R V = 10V, I = 0.5 I , Note 1 36 m AC and DC Motor Drives DS(on) GS D D25 Robotics and Servo Controls 2018 IXYS CORPORATION, All Rights Reserved DS100479B(3/18)IXFT94N30P3 IXFQ94N30P3 IXFH94N30P3 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 40 68 S fs DS D D25 C 5510 pF iss C V = 0V, V = 25V, f = 1MHz 965 pF oss GS DS C 25 pF rss R Gate Input Resistance 1.2 Gi t 23 ns d(on) Resistive Switching Times t 19 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 49 ns d(off) R = 1 (External) t 11 ns G f Q 102 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 33 nC gs GS DS DSS D D25 Q 37 nC gd R 0.12 C/W thJC R (TO-247 & TO-3P) 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 94 A S GS I Repetitive, Pulse Width Limited by T 376 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 250 ns rr I = 47A, -di/dt = 100A/ s F I 15.6 A RM V = 100V, V = 0V R GS Q 1.4 C RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537