TM Polar Power MOSFET V = 250V IXFK120N25P DSS TM I = 120A HiPerFET IXFX120N25P D25 R 24m DS(on) t 200ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode TO-264 (IXFK) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 250 V DSS J V T = 25C to 150C, R = 1M 250 V DGR J GS V Continuous 20 V G GSS D (TAB) S V Transient 30 V GSM I T = 25C 120 A D25 C PLUS247 (IXFX) I Lead Current Limit, RMS 75 A LRMS I T = 25C, Pulse Width Limited by T 300 A DM C JM I T = 25C 60 A A C E T = 25C 2.5 J AS C dV/dt I I , V V , T 150C 10 V/ns (TAB) S DM DD DSS J P T = 25C 700 W D C G = Gate D = Drain S = Source TAB = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6mm (0.062 in.) from Case for 10s 300 C L Features T Plastic Body for 10s 260 C SOLD z M Mounting Force (PLUS247) 20..120/4.5..27 N/lb. International Standard Packages d Mounting Torque (TO-264) 1.13/10 Nm/lb.in. z Fast Intrinsic Diode z Avalanche Rated Weight PLUS247 6 g z TO-264 10 g Low Package Inductance Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z Space Savings (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J High Power Density BV V = 0V, I = 250A 250 V DSS GS D Applications V V = V , I = 4mA 2.5 5.0 V GS(th) DS GS D z Switched-Mode and Resonant-Mode I V = 20V, V = 0V 200 nA GSS GS DS Power Supplies z I V = V , V = 0V 25 A DC-DC Converters DSS DS DSS GS z T = 125C 250 A Laser Drivers J z AC and DC Motor Drives R V = 10V, I = 0.5 I , Note 1 19 24 m DS(on) GS D D25 z Robotics and Servo Controls 2009 IXYS CORPORATION, All Rights Reserved DS99379F(5/09) IXFK120N25P IXFX120N25P Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 45 70 S fs DS D D25 C 8700 nF iss C V = 0V, V = 25V, f = 1MHz 1300 pF oss GS DS C 240 pF rss t 30 ns d(on) Resistive Switching Times t 33 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 130 ns d(off) R = 3.3 (External) G t 33 ns f Q 185 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 Q 80 nC gd R 0.18 C/W thJC R 0.15 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 120 A S GS I Repetitive, Pulse Width Limited by T 300 A SM JM TM PLUS 247 (IXFX) Outline V I = 120A, V = 0V, Note 1 1.5 V SD F GS t 200 nS rr I = 25A, -di/dt = 100A/s F Q 0.8 C RM V = 100V, V = 0V R GS I 8.0 A RM Note 1: Pulse Test, t 300s Duty Cycle, d 2%. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537