Advance Technical Information TM GigaMOS TrenchT2 V = 170V IXFK220N17T2 DSS TM HiperFET I = 220A IXFX220N17T2 D25 R 6.3m Power MOSFET DS(on) t 140ns rr N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G V T = 25C to 175C 170 V Tab DSS J D S V T = 25C to 175C, R = 1M 170 V DGR J GS V Continuous 20 V GSS PLUS247 (IXFX) V Transient 30 V GSM I T = 25C (Chip Capability) 220 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25C, Pulse Width Limited by T 550 A DM C JM I T = 25C 110 A A C G E T = 25C2J Tab D AS C S P T = 25C 1250 W D C G = Gate D = Drain dv/dt I I , V V , T 175C 20 V/ns S DM DD DSS J S = Source Tab = Drain T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg z T 1.6mm (0.062 in.) from Case for 10s 300 C High Current Handling Capability L z T Plastic Body for 10s 260 C Fast Intrinsic Diode SOLD z Avalanche Rated M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d z Low R DS(on) F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Weight TO-264 10 g Advantages PLUS247 6 g z Easy to Mount z Space Savings z High Power Density Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 170 V DSS GS D z Synchronous Recification z V V = V , I = 8mA 2.5 5.0 V DC-DC Converters GS(th) DS GS D z Battery Chargers I V = 20V, V = 0V 200 nA z GSS GS DS Switch-Mode and Resonant-Mode Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS z DC Choppers T = 150C 3 mA J z AC Motor Drives z R V = 10V, I = 60A, Note 1 5.1 6.3 m Uninterruptible Power Supplies DS(on) GS D z High Speed Power Switching Applications 2010 IXYS CORPORATION, All Rights Reserved DS100230(01/10)IXFK220N17T2 IXFX220N17T2 Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 105 175 S fs DS D C 31 nF iss C V = 0V, V = 25V, f = 1MHz 2130 pF oss GS DS C 290 pF rss R Gate Input Resistance 1.40 Gi t 44 ns d(on) Terminals: 1 - Gate Resistive Switching Times 2 - Drain t 160 ns 3 - Source r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 40 ns d(off) Millimeter Inches R = 1 (External) Dim. G Min. Max. Min. Max. t 150 ns f A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q 500 nC g(on) A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 Q V = 10V, V = 0.5 V , I = 0.5 I 130 nC gs GS DS DSS D D25 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 Q 137 nC gd c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 R 0.12 C/W thJC E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC R 0.15 C/W thCS J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Source-Drain Diode R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 Symbol Test Conditions Characteristic Values T 1.57 1.83 .062 .072 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TM PLUS 247 (IXFX) Outline I V = 0V 220 A S GS I Repetitive, Pulse Width Limited by T 880 A SM JM V I = 100A, V = 0V, Note 1 1.3 V SD F GS t 140 ns rr I = 110A, -di/dt = 100A/s F Q 0.5 C RM V = 85V, V = 0V R GS I 8.6 A RM Note 1. Pulse test, t 300s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 ADVANCE TECHNICAL INFORMATION A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 The product presented herein is under development. The Technical Specifications offered are derived b 1.91 2.13 .075 .084 1 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a b 2.92 3.12 .115 .123 2considered reflectio of the anticipated result. IXYS reserves the right to change limits, test C 0.61 0.80 .024 .031 conditions, and dimensions without notice. D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537