X-On Electronics has gained recognition as a prominent supplier of IXFX24N100F MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFX24N100F MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFX24N100F IXYS

IXFX24N100F electronic component of IXYS
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Part No.IXFX24N100F
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET IXFX24N100F 24A 1000V F-Class HiPerRF MOSFET
Datasheet: IXFX24N100F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 22.1832
5 : USD 21.7404
10 : USD 21.168
25 : USD 20.1636
50 : USD 20.0988
100 : USD 19.5048
250 : USD 18.4032
500 : USD 18.144
1000 : USD 18.144
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Height
Length
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the IXFX24N100F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFX24N100F and other electronic components in the MOSFETs category and beyond.

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TM V = 1000V IXFK24N100F HiPerRF DSS I = 24A IXFX24N100F Power MOSFETs D25 R 390m F-Class: MegaHertz Switching DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g TM PLUS 247 (IXFX) Intrinsic R , High dV/dt, Low t g rr Symbol Test Conditions Maximum Ratings G (TAB) D V T = 25C to 150C 1000 V DSS J V T = 25C to 150C, R = 1M 1000 V DGR J GS TO-264 AA (IXFK) V Continuous 20 V GSS V Transient 30 V GSM I T = 25C24A D25 C I T = 25C, Pulse Width Limited by T 96 A DM C JM G I T = 25C24A D A C (TAB) S E T = 25C3J AS C G = Gate D = Drain dV/dt I I , di/dt < 100A/ s, V V 15 V/ns S DM DD DSS S = Source TAB = Drain T 150C, R = 2 J G P T = 25C 560 W D C Features T -55 ... +150 C J z T 150 C RF capable MOSFETs JM z T -55 ... +150 C Double metal process for low gate stg resistive T 1.6mm (0.062 in.) from Case for 10s 300 C L z Avalanche rated T Plastic Body for 10s 260 C SOLD z Low package inductance M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. z d Fast intrinsic rectifier F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Applications Weight TO-264 10 g PLUS247 6 g z DC-DC converters z Switched-mode and resonant-mode power supplies, >500kHz switching z DC choppers Symbol Test Conditions Characteristic Values z 13.5 MHz industrial applications (T = 25C Unless Otherwise Specified) Min. Typ. Max. J z Pulse generation z BV V = 0V, I = 1mA 1000 V Laser drivers DSS GS D z RF amplifiers V V = V , I = 8mA 3.0 5.5 V GS(th) DS GS D Advantages I V = 20V, V = 0V 200 nA GSS GS DS z TM PLUS 247 package for clip or spring I V = V , V = 0V 100 A DSS DS DSS GS mounting T = 125C 3 mA J z Space savings R V = 10V, I = 0.5 I , Note 1 390 m z DS(on) GS D D25 High power density 2002 IXYS CORPORATION, All Rights Reserved DS98874B(09/02)IXFK24N100F IXFX24N100F Symbol Test Conditions Characteristic Values TM PLUS247 Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 16 24 S fs DS D D25 C 6600 pF iss C V = 0V, V = 25V, f = 1MHz 760 pF oss GS DS C 230 pF rss t 22 ns d(on) Resistive Switching Times t 18 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 52 ns d(off) R = 1 (External) G t 11 ns f Terminals: 1 - Gate 2 - Drain (Collector) Q 195 nC g(on) 3 - Source (Emitter) 4 - Drain (Collector) Q V = 10V, V = 0.5 V , I = 0.5 I 40 nC gs GS DS DSS D D25 Dim. Millimeter Inches Q 100 nC gd Min. Max. Min. Max. R 0.21 C/W A 4.83 5.21 .190 .205 thJC A 2.29 2.54 .090 .100 1 R 0.15 C/W A 1.91 2.16 .075 .085 thCK 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 Source-Drain Diode Characteristic Values D 20.80 21.34 .819 .840 T = 25C Unless Otherwise Specified) Min. Typ. Max. E 15.75 16.13 .620 .635 J e 5.45 BSC .215 BSC I V = 0V 24 A L 19.81 20.32 .780 .800 S GS L1 3.81 4.32 .150 .170 I Repetitive, Pulse Width Limited by T 96 A SM JM Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 V I = I , V = 0V, Note 1 1.5 V SD F S GS TO-264 AA Outline t 250 ns rr I = 24A, -di/dt = 100A/s F Q 1.4 C RM V = 100V, V = 0V R GS I 10 A RM Note: 1. Pulse test, t 300 s, duty cycle d 2 % Millimeter Inches Dim. Min. Max. Min. Max. A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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