TM GigaMOS TrenchT2 V = 150V IXFK360N15T2 DSS TM HiperFET I = 360A IXFX360N15T2 D25 R 4.0m Power MOSFET DS(on) t 150ns rr N-Channel Enhancement Mode Avalanche Rated TO-264 (IXFK) Fast Intrinsic Diode G Symbol Test Conditions Maximum Ratings D S V T = 25 C to 175 C 150 V DSS J Tab V T = 25 C to 175 C, R = 1M 150 V DGR J GS V Continuous 20 V GSS V Transient 30 V PLUS247 (IXFX) GSM I T = 25 C (Chip Capability) 360 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25 C, Pulse Width Limited by T 900 A DM C JM G I T = 25 C 100 A A C D Tab E T = 25 C TBD J S AS C P T = 25 C 1670 W D C G = Gate D = Drain S = Source Tab = Drain dV/dt I I , V V , T 175C 20 V/ns S DM DD DSS J T -55 ... +175 C J T 175 C JM Features T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C International Standard Packages L High Current Handling Capability T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Fast Intrinsic Diode M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C Low R DS(on) Weight TO-264 10 g PLUS247 6 g Advantages Easy to Mount Space Savings Symbol Test Conditions Characteristic Values High Power Density (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 3mA 150 V DSS GS D V V = V , I = 8mA 2.5 5.0 V Synchronous Recification GS(th) DS GS D DC-DC Converters I V = 20V, V = 0V 200 nA GSS GS DS Battery Chargers Switched-Mode and Resonant-Mode I V = V , V = 0V 50 A DSS DS DSS GS Power Supplies T = 150C 5 mA J DC Choppers R V = 10V, I = 60A, Note 1 4.0 m AC Motor Drives DS(on) GS D Uninterruptible Power Supplies High Speed Power Switching Applications 2016 IXYS CORPORATION, All Rights Reserved DS100181A(8/16)IXFK360N15T2 IXFX360N15T2 Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 140 230 S fs DS D C 47.5 nF iss C V = 0V, V = 25V, f = 1MHz 3060 pF oss GS DS C 665 pF rss t 50 ns d(on) Resistive Switching Times t 170 ns r V = 10V, V = 0.5 V , I = 100A Pins: 1 - Gate GS DS DSS D t 115 ns 2,4 - Drain d(off) R = 1 (External) G 3 - Source t 265 ns f Millimeter Inches Dim. Min. Max. Min. Max. Q 715 nC g(on) A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q V = 10V, V = 0.5 V , I = 0.5 I 185 nC gs GS DS DSS D D25 A2 2.00 2.10 .079 .083 Q 200 nC b 1.12 1.42 .044 .056 gd b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 R 0.09C/W thJC c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 R 0.15C/W thCS E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Source-Drain Diode R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 Symbol Test Conditions Characteristic Values T 1.57 1.83 .062 .072 (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J TM PLUS 247 (IXFX) Outline I V = 0V 360 A S GS I Repetitive, Pulse Width Limited by T 1440 A SM JM V I = 60A, V = 0V, Note 1 1.2 V SD F GS t 150 ns rr I = 160A, -di/dt = 100A/ s F Q 0.50 C RM V = 60V, V = 0V R GS I 9.00 A RM Note 1. Pulse test, t 300 s duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537