TM TM Polar HiPerFET V = 900V IXFK40N90P DSS Power MOSFETs I = 40A IXFX40N90P D25 R < 230m DS(on) t < 300ns rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-264 (IXFK) Symbol Test Conditions Maximum Ratings G D V T = 25C to 150C 900 V DSS J S V T = 25C to 150C, R = 1M 900 V DGR J GS Tab V Continuous 30 V GSS V Transient 40 V GSM PLUS247 (IXFX) I T = 25C40 A D25 C I T = 25C, Pulse Width Limited by T 80 A DM C JM I T = 25C20 A A C E T = 25C 2.5 J G AS C D Tab S dv/dt I I , V V , T 150C 15 V/ns S DM DD DSS J P T = 25C 960 W G = Gate D = Drain D C S = Source Tab = Drain T -55 to +150 C J T 150 C JM T -55 to +150 C stg Features T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD z Low R and Q DS(on) G M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d z Avalanche Rated F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. z C Low Package Inductance z Fast Intrinsic Rectifier Weight TO-264 10 g PLUS247 6 g Advantages z High Power Density Symbol Test Conditions Characteristic Values z Easy to Mount (T = 25C, Unless Otherwise Specified) Min. Typ. Max. z J Space Savings BV V = 0V, I = 3mA 900 V DSS GS D V V = V , I = 1mA 3.5 6.5 V GS(th) DS GS D Applications I V = 30V, V = 0V 200 nA GSS GS DS z Switch-Mode and Resonant-Mode I V = V , V = 0V 50 A Power Supplies DSS DS DSS GS z T = 125C 3.5 mA DC-DC Converters J z Laser Drivers R V = 10V, I = 0.5 I , Note 1 230 m DS(on) GS D D25 z AC and DC Motor Drives z Robotics and Servo Controls 2011 IXYS CORPORATION, All Rights Reserved DS100061A(10/11) IXFK40N90P IXFX40N90P Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 18 30 S fs DS D D25 C 14 nF iss C V = 0V, V = 25V, f = 1MHz 896 pF oss GS DS C 58 pF rss R Gate Input Resistance 1.5 Gi t 53 ns d(on) Resistive Switching Times Terminals: 1 - Gate t 50 ns 2 - Drain r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 3 - Source t 77 ns 4 - Drain d(off) R = 1 (External) G Millimeter Inches t 46 ns Dim. f Min. Max. Min. Max. A 4.82 5.13 .190 .202 Q 230 nC g(on) A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q V = 10V, V = 0.5 V , I = 0.5 I 70 nC gs GS DS DSS D D25 b 1.12 1.42 .044 .056 Q 100 nC b1 2.39 2.69 .094 .106 gd b2 2.90 3.09 .114 .122 R 0.13 C/W c 0.53 0.83 .021 .033 thJC D 25.91 26.16 1.020 1.030 R 0.15 C/W E 19.81 19.96 .780 .786 thCS e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 R 3.81 4.32 .150 .170 Source-Drain Diode R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. TM J PLUS247 Outline I V = 0V 40 A S GS I Repetitive, Pulse Width Limited by T 160 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 300 ns rr I = 20A, -di/dt = 100A/s, F I 14.0 A RM V = 100V, V = 0V R GS Q 1.7 C RM Terminals: 1 - Gate 2 - Drain 3 - Source Note: 1. Pulse test, t 300s, duty cycle, d 2%. Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 2.29 2.54 .090 .100 A 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537