Advance Technical Information TM HiPerRF V = 500V IXFK55N50F DSS Power MOSFETs I = 55A IXFX55N50F D25 F-Class: MegaHertz Switching R 85m DS(on) t 250ns rr N-Channel Enhancement Mode Avalanche Rated Low Q , Low Intrinsic R g g TO-264 (IXFK) High dV/dt, Low t rr Symbol Test Conditions Maximum Ratings G D (TAB) V T = 25C to 150C 500 V S DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS PLUS247 (IXFX) V Continuous 20 V GSS V Transient 30 V GSM I T = 25C55A D25 C I T = 25C, Pulse Width Limited by T 220 A DM C JM I T = 25C55A AR C E T = 25C3J AS C (TAB) dv/dt I I , di/dt 100 A/s, V V 10 V/ns S DM DD DSS T 150C, R = 2 J G G = Gate D = Drain P T = 25C 560 W S = Source TAB = Drain D C T -55 ... +150 C J Features T 150 C JM T -55 ... +150 C stg z RF capable Mosfets z T 1.6mm (0.062 in.) from Case for 10s 300 C Rugged polysilicon gate cell structure L z T Plastic Body for 10s 260 C SOLD Double metal process for low gate resistance M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. d z Unclamped Inductive Switching (UIS) F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C rated z Weight TO-264 10 g Low package inductance PLUS247 6 g - easy to drive and to protect z Fast intrinsic rectifier Applications z DC-DC converters z Symbol Test Conditions Characteristic Values Switched-mode and resonant-mode (T = 25C Unless Otherwise Specified) Min. Typ. Max. J power supplies, >500kHz switching z DC choppers BV V = 0V, I = 1mA 500 V DSS GS D z Pulse generation z V V = V , I = 8mA 3.0 5.5 V Laser drivers GS(th) DS GS D I V = 20V, V = 0V 200 nA GSS GS DS Advantages I V = V 100 A z DSS DS DSS TM PLUS 247 package for clip or spring V = 0V T = 125C 3 mA GS J mounting z Space savings R V = 10V, I = 0.5 I , Note 1 85 m DS(on) GS D D25 z High power density 2002 IXYS CORPORATION, All Rights Reserved DS98855A(9/02)IXFK55N50F IXFX55N50F Symbol Test Conditions Characteristic Values TO-264 (IXFK) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 22 33 S fs DS D D25 C 6700 pF iss C V = 0V, V = 25V, f = 1MHz 1250 pF oss GS DS C 330 pF rss t 24 ns d(on) Resistive Switching Times t 20 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 45 ns d(off) R = 1 (External) G t 9.6 ns f Millimeter Inches Dim. Min. Max. Min. Max. Q 195 nC g(on) A 4.82 5.13 .190 .202 A1 2.54 2.89 .100 .114 Q V = 10V, V = 0.5 V , I = 0.5 I 50 nC gs GS DS DSS D D25 A2 2.00 2.10 .079 .083 Q 95 nC b 1.12 1.42 .044 .056 gd b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 R 0.21 C/W thJC c 0.53 0.83 .021 .033 D 25.91 26.16 1.020 1.030 R 0.15 C/W thCS E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Source-Drain Diode R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 S 6.04 6.30 .238 .248 Symbol Test Conditions Characteristic Values T 1.57 1.83 .062 .072 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TM PLUS 247 (IXFX) Outline I V = 0V 55 A S GS I Repetitive, Pulse Width Limited by T 220 A SM JM V I = 25A, V = 0V, Note 1 1.5 V SD F GS t 250 ns rr I = 25A, -di/dt = 100A/s F Q 1 C RM V = 100V, V = 0V R GS I 10 A RM Terminals: 1 - Gate Note: 1. Pulse test, t 300 s, duty cycle d 2 % 2 - Drain (Collector) 3 - Source (Emitter) 2. See IXFN55N50F Datasheet for Characteristic Curves 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 ADVANCE TECHNICAL INFORMATION b 1.91 2.13 .075 .084 1 The product presented herein is under development. The Technical Specifications offered are derived b 2.92 3.12 .115 .123 2 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a C 0.61 0.80 .024 .031considered reflectio of the anticipated result. IXYS reserves the right to change limits, test D 20.80 21.34 .819 .840 conditions, and dimensions without notice. E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537