X-On Electronics has gained recognition as a prominent supplier of IXFY30N25X3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXFY30N25X3 MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXFY30N25X3 IXYS

IXFY30N25X3 electronic component of IXYS
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Part No.IXFY30N25X3
Manufacturer: IXYS
Category: MOSFETs
Description: MOSFET DiscMSFT NChUltrJnctn X3Class TO-252D
Datasheet: IXFY30N25X3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.79 ea
Line Total: USD 6.79 
Availability - 66
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
66
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 6.79
4 : USD 5.516
9 : USD 5.208
70 : USD 5.04

   
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We are delighted to provide the IXFY30N25X3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXFY30N25X3 and other electronic components in the MOSFETs category and beyond.

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CorporationThe IXFY30N25X3 is a DiscMSFT NChUltrJnctn X3Class Field Effect Transistor (FET) from IXYS Corporation. It is encased in a TO-252D (plastic surface-mount) package. The FET has an n-channel design, and is designed for operating at high-voltage, fast-switching applications, with a maximum drain-source voltage rating of 30 V. It has a fast switching speed of up to 15 V/ns, and a maximum drain current rating of 14 A. The IXFY30N25X3 FET is well-suited for use in high-speed power applications, including power switches, converters, and motor drivers.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
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