The IXKH20N60C5 is an Insulated-Gate, Bipolar Transistor (IGBT) developed by IXYS, a global leader in power semiconductor technology. It is housed in a insulated molded plastic package that facilitates its use in many electronic applications such as motor controls, lighting systems, uninterruptible power supplies, power factor correction, and more. The device has a maximum collector emitter voltage of 600V, a current capacity of 20A, and a total gate charge of 5nC. It has a short-circuit withstand time of 1 microsecond, and a high frequency performance up to 10kHz.